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A kind of aluminum nitride single crystal growth method

A growth method, aluminum nitride technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of aluminum nitride crystal voids, thermal mismatch lattice, mismatch, etc., to achieve less impurity introduction, The temperature curve and pressure curve are simple and controllable, and the effect of low crystal growth cost

Active Publication Date: 2019-04-05
ULTRATREND TECH INC
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the thermal mismatch and lattice mismatch between the crucible material (TaC, W, etc.) or the heterogeneous substrate material (SiC wafer) and the aluminum nitride crystal
Therefore, the final aluminum nitride crystal will always have defects such as voids, cracks, and dislocations.

Method used

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  • A kind of aluminum nitride single crystal growth method
  • A kind of aluminum nitride single crystal growth method
  • A kind of aluminum nitride single crystal growth method

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Embodiment Construction

[0031] The technical solution of the present invention will be further described below in conjunction with the accompanying drawings.

[0032] The following is a specific embodiment of a method for growing an aluminum nitride single crystal, comprising the following steps:

[0033] (1) Put the aluminum nitride powder into the crucible 2, place the crucible 2 in a closed furnace body, set a heating mechanism for heating the crucible 2 in the furnace body, and a vacuum pump for evacuating the furnace body Vacuum mechanism, a nitrogen input mechanism for feeding high-purity nitrogen into the furnace body, and a temperature-measuring mechanism for measuring the temperature of the crucible 2; the purity of the selected aluminum nitride powder is at least 99.9%; the purity of the selected high-purity nitrogen is at least 99.999%;

[0034] (2) Compact the aluminum nitride powder in the crucible 2, and heat the bottom 4 of the crucible to 1900-1950°C through the heating mechanism to ...

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Abstract

Disclosed is a method for growing an aluminium nitride monocrystal, wherein a temperature curve and a pressure curve during crystal growth are simple and controllable; a crystal grows on the surface of an aluminium nitride sintered body, and the grown aluminium nitride monocrystal has almost no defects therein; a crucible is prepared using a tungsten material, with few impurities being introduced; an aluminium nitride monocrystal, the maximum size thereof being on the centimetre scale, can be obtained; and the costs of growing a crystal are lower.

Description

technical field [0001] The invention relates to an aluminum nitride single crystal growth method. Background technique [0002] Aluminum nitride crystal belongs to the third-generation semiconductor material, with high band gap (6.2eV), high breakdown field strength, high electron mobility, high volume resistivity, high thermal conductivity, and thermal stability Good, corrosion resistance, radiation resistance and other excellent physical and chemical properties, widely used in high frequency, microwave power devices, ultraviolet detectors, deep ultraviolet LEDs and GaN substrate materials and other fields. [0003] A large number of studies have shown that physical vapor transport (PVT) is the most effective method for growing large-sized aluminum nitride single crystals. That is, the material is sublimated into a gaseous state in the high-temperature region, and driven by the temperature gradient, the gaseous state diffuses and transports, and grows crystals in the low-t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/38C30B23/00
CPCC30B23/00C30B23/002C30B29/38
Inventor 吴亮曹凯汪佳刘理想龚加玮王智昊王琦琨
Owner ULTRATREND TECH INC