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Silicon surface metallization method

A technology of metallization and silicon surface, applied in the field of metallization, can solve the problems of complex process, high cost, poor thermal conductivity, etc., and achieve the effect of good thermal conductivity, low cost, and energy saving

Pending Publication Date: 2017-05-10
DALIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this traditional silicon substrate metallization method is that it is carried out at room temperature. The metallization layer and the silicon substrate are physically and mechanically connected, and they are bonded together by mechanical occlusal force. The performance of force and heat conduction is relatively poor, and the process is complicated and the cost is high

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] S1. Use Coredraw software to draw the relevant metallized area rectangle in the computer;

[0023] S2. Place the 50*50*1mm silicon substrate (thermal conductivity 150W / ms) on the laser cutting machine worktable;

[0024] S3. Coat nickel powder evenly on its surface;

[0025] S4. Turn on the laser cutting machine, start laser scanning sintering, and the scanning speed is 80mm / s;

[0026] S5. The silicon substrate with metallized surface, the surface is electroplated and anti-corrosion treatment;

[0027] S6. The treated samples are waiting for soldering, or surface circuit etching.

Embodiment 2

[0029] S1. Use Coredraw software to draw the relevant metallized area rectangle in the computer;

[0030] S2. Place the 50*50*1mm silicon substrate (thermal conductivity 150W / ms) on the laser cutting machine worktable;

[0031] S3. Evenly coat molybdenum powder on its surface;

[0032] S4. Turn on the laser cutting machine and start laser scanning sintering, the scanning speed is 60mm / s;

[0033] S5. The silicon substrate with metallized surface, the surface is electroplated and anti-corrosion treatment;

[0034] S6. The treated samples are waiting for soldering, or surface circuit etching.

Embodiment 3

[0036] S1. Use Coredraw software to draw the relevant metallized area rectangle in the computer;

[0037] S2. Place the 50*50*1mm silicon substrate (thermal conductivity 150W / ms) on the laser cutting machine worktable;

[0038] S3. Coat tungsten powder evenly on its surface;

[0039] S4. Turn on the laser cutting machine, start laser scanning sintering, and the scanning speed is 40mm / s;

[0040] S5. The silicon substrate with metallized surface, the surface is electroplated and anti-corrosion treatment;

[0041] S6. The treated samples are waiting for soldering, or surface circuit etching.

[0042] The metallized silicon substrate can be used for soldering with heat sinks and etching circuit processes on copper clad silicon boards.

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Abstract

The invention relates to a silicon surface metallization method. The method comprises the following steps of: uniformly coating metal powder on a silicon substrate; and carrying out laser scanning and sintering to completely metallize the surface of the silicon substrate so as to form a silicon-coated metal plate. A glass phase and a ceramic phase are not contained between the silicon substrate and a metal conducting layer, so that the heat conductivity of the silicon substrate is ensured; meanwhile, local heating is adopted, so that the whole other part of a workpiece is in a normal temperature state and the functions of the other part are not influenced; and the method is simple in process and low in cost.

Description

technical field [0001] The invention relates to a metallization method, in particular to a silicon surface metallization method. Background technique [0002] Since the brazing solder cannot directly wet the silicon surface, when the silicon substrate surface is etched for circuits or soldering between silicon substrates, a metallization layer UBM needs to be grown between the solder and the silicon wafer. This process is called Metallization of silicon substrates. [0003] The traditional silicon substrate metallization method is: (1) First, a layer of adhesion layer material is grown on the surface of the silicon substrate (silicon wafer) by sputtering. The adhesion layer material is titanium or chromium, and the thickness is 50-200nm. ; (2) Then, a barrier layer is grown by electroplating or electroless plating, and the barrier layer material is usually nickel, with a thickness of 5-20um; (3) Finally, a protective layer is grown by evaporation or sputtering, which is com...

Claims

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Application Information

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IPC IPC(8): H01L21/60
CPCH01L24/03H01L2224/03505H01L2224/03848
Inventor 孙旭东惠宇毕孝国刘旭东
Owner DALIAN UNIV