Semiconductor type carbon nanotube infrared light detecting and imaging device

Abstract

The invention provides a semiconductor type carbon nanotube infrared light detecting and imaging device which comprises a pixel module containing a carbon nanotube cascade photo voltage detector. The carbon nanotube cascade photo voltage detector is provided with a semiconductor type carbon nanotube film serving as a conductive channel and a light absorbing material. The semiconductor type carbon nanotube film is provided with asymmetrical contact electrodes and a virtual electrode pair. The invention also discloses the preparing method for the device. With the device, the outputted photo voltage is increased; the detection efficiency for signal-to-noise-ratio is increased effectively. The processing technology is simple and can reduce the high cost of complex technologies in the connection of a traditional infrared light detector, and is especially suitable for the manufacturing of small sized, high performance and low cost indoor working infrared light detecting and imaging device.

Description

technical field [0001] The invention relates to an infrared light detection imager, in particular to an infrared light detection imager prepared based on semiconducting carbon nanotubes. Background technique [0002] Infrared detection imagers have broad application prospects, such as infrared night vision, automotive automatic driving, product inspection, and military applications. Existing infrared detection imagers are mainly based on traditional bulk materials such as indium gallium arsenic, HgCdTe and other material detectors, which require cooling to achieve high performance. In addition, the preparation process of the above-mentioned materials is complicated, and usually requires MOCVD or MBE epitaxial growth, which is incompatible with the existing mainstream CMOS processing technology, and the above-mentioned materials have strict requirements on the substrate for epitaxial growth, which makes them expensive and difficult to manufacture on a large scale . Therefor...

AI Technical Summary

Problems solved by technology

However, the limited absorption area of ​​carbon nanotubes and the limited photocurrent generated by them are usually on the nanoampere level, resulting in low responsivity and detectability, which cannot be compared with existing commercial detectors.

[0005] In view of the relatively small incident light absorption area of ​​a single carbon tube and the complexity of the traditional semiconductor manufacturing process, as well as the low performance of the detector working in the photocurrent mode

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