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Cascading infrared light detector based on semiconductor CNT (Carbon Nano Tube)

A technology of carbon nanotubes and semiconductors, applied in semiconductor devices, nanotechnology for sensing, nanotechnology, etc., can solve the problems of small light absorption area, low detector current responsivity, and small output photocurrent, and achieve The effect of improving sensitivity

Inactive Publication Date: 2012-10-10
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as far as the application of infrared photodetectors is concerned, an obvious shortcoming of the infrared detector based on a single carbon nanotube of this structure is that the output photocurrent is too small, and the current responsivity of the detector is low, which cannot meet the actual weak requirements. Light detection requires, mainly due to the relatively small light absorption area of ​​a single carbon nanotube material for incident light

Method used

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  • Cascading infrared light detector based on semiconductor CNT (Carbon Nano Tube)
  • Cascading infrared light detector based on semiconductor CNT (Carbon Nano Tube)
  • Cascading infrared light detector based on semiconductor CNT (Carbon Nano Tube)

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Embodiment 1

[0034] image 3 Shown is the basic form of the cascaded infrared photodetector of the present invention. Between the two asymmetric external electrodes 2 and 3 on the semiconducting carbon nanotube array 1, there is a dummy electrode pair 8 every 1.5 microns, wherein the electrode 2 is a palladium electrode with a width of about 0.6 microns, and the electrode 3 is a palladium electrode with a width of About 0.6 micron scandium (or yttrium) electrode, dummy electrode pair 8 is made up of partially overlapping scandium (or yttrium) dummy electrode and palladium dummy electrode, the width of scandium (or yttrium) dummy electrode and palladium dummy electrode is about 0.6 micron respectively, overlapping The width of the domains is about 0.3 microns. Concrete preparation steps are as follows:

[0035] 1. Obtain the Si / SiO 2 Intrinsically high-density semiconducting carbon nanotube array 1 on a substrate. Carbon nanotubes grown on other substrates (such as quartz or alumina sub...

Embodiment 2

[0044] preparation Image 6 A cascaded infrared detector based on carbon nanotube films is shown.

[0045] Firstly, high-purity carbon nanotubes are formed into a film of a certain thickness on the surface of the substrate by chemical assembly, and the assembled carbon nanotubes are arranged in parallel; then the cascade infrared Preparation of the detector module. A multi-unit detector with a series structure is formed on one carbon nanotube, and such multiple carbon nanotubes are arranged side by side to form an infrared light detector module with a series-parallel structure.

[0046] Will Image 6 One of the test electrodes 7 is grounded, and the other is connected to an external detection circuit or a voltmeter. When infrared light is incident on the surface of the detector, the photovoltage value generated by the detector can be read by a voltmeter or output a voltage signal to the external detection circuit. By comparing the optical power density incident on the dete...

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Abstract

The invention discloses a cascading infrared light detector based on a semiconductor CNT (Carbon Nano Tube). The cascading infrared light detector based on the semiconductor CNT is characterized in that the semiconductor CNT is used as a light adsorption material and an electric conduction channel, two ends of the semiconductor CNT are provided with non-symmetrical metal electrodes, i.e. a palladium electrode and a scandium or yttrium electrode, the electric conduction channel between the metal electrodes is provided with n-1 virtual electrode pairs which are used for dividing the electric conduction channel into n unit devices which are connected in series together, the virtual electric pairs are formed by the palladium virtual electrode and the scandium or yttrium electrode which are connected together, the palladium virtual electrode is arranged at one side closing to the scandium or yttrium electrode, the scandium or yttrium electrode is arranged at one side closing to the palladium virtual electrode, one of the non-symmetrical metal electrodes is connected with the ground, the other non-symmetrical metal electrode is connected with a voltage measuring circuit or a voltmeter, and a photovoltage signal generated by infrared light can be absorbed by the semiconductor CNT and can be measured by the voltage measuring circuit or the voltmeter. According to the cascading infrared light detector based on the semiconductor CNT, disclosed by the invention, through the introduction of the virtual electrodes, the infrared cascading detection can be realized without mixing, the output photovoltage of a detector can be multiplied, and an SNR (Signal to Noise Ratio) is increased.

Description

technical field [0001] The invention relates to an infrared light detector, especially an infrared detector based on semiconductor carbon nanotubes. Background technique [0002] Infrared light detection is a very important direction in the field of light detection. It is widely used in industrial, military and scientific applications, including monitoring, manufacturing process control, optical communication, biological and military night detection. Infrared light detectors based on various materials are currently a research hotspot of scientists from all over the world. Infrared detectors based on traditional semiconductor materials have high quantum efficiency, good limit detection performance at low temperatures, and can achieve high detection and fast response speeds, but due to technical difficulties, complex processes, and high prices, it is difficult to replace them. Large-scale applications, especially high-performance broadband infrared detectors at room temperatu...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H01L31/102H01L31/0224B82Y15/00
Inventor 王胜彭练矛曾庆圣张志勇杨雷静
Owner PEKING UNIV
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