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Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology

A parasitic patch and processing technology, applied in antennas, antenna grounding devices, electrical components, etc., can solve problems such as unfavorable antenna radiation, increase antenna size, and large silicon loss, and achieve simple structure and improved antenna radiation gain. , the effect of low cost

Inactive Publication Date: 2017-05-10
NANJING UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In microwave antenna design, the lower the dielectric constant of the substrate where the antenna is located, the better the radiation performance of the antenna. High dielectric constant is not conducive to the radiation of the antenna. In addition, the loss of silicon is large, and it is difficult to obtain a higher gain value.
In addition, the thickness of the substrate in the GaN processing technology is very thin, which is not conducive to antenna radiation
[0003] It can be seen from the above that there are few methods for improving the gain of microstrip antennas based on GaN processing technology in the prior art, and the commonly used method of loading parasitic patches will increase the size of the antenna

Method used

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  • Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology
  • Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology
  • Parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology

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Experimental program
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Effect test

Embodiment 1

[0031] to combine figure 1 , the microstrip antenna includes a rectangular patch antenna 1, a feeding microstrip line 2, a parasitic patch 3 grounded at one end, a parasitic metal strip 4, a grounded metal post 5, a dielectric substrate 6, and a GSG structure required for probe measurement 7 and metal floor 8. The parasitic patch 3 with one end grounded is connected to the metal floor 8 through 13 grounded metal posts 5 . Two parasitic metal strips 4 are respectively printed along the non-radiating sides of the rectangular patch antenna 1 . Wherein the length L of the rectangular microstrip antenna 1 is 0.68mm (0.47λ g ), the width W is 1.2mm (0.83λ g ). The length L of a parasitic patch 3 grounded at one end 2 0.38mm (0.26λ g ), width W 2 1.2mm (0.83λ g ). The length L of the parasitic metal strip 4 1 0.75mm (0.52λ g ), width W 1 0.1mm (0.07λ g ). The gap width G between the rectangular patch antenna 1 and the parasitic patch 3 grounded at one end 1 0.2mm (0.14...

Embodiment 2

[0037] to combine Figure 5 , the microstrip antenna includes a rectangular patch antenna 1, a feeding microstrip line 2, a parasitic patch 3 grounded at one end, a parasitic metal strip 4, a grounded metal post 5, a dielectric substrate 6, and a GSG structure required for probe measurement 7 and metal floor 8. The parasitic patch 3 with one end grounded is connected to the metal floor 8 through 13 grounded metal posts 5 . Two parasitic metal strips 4 are respectively printed along the non-radiating sides of the rectangular patch antenna 1 . Wherein the length L of the rectangular microstrip antenna 1 is 0.67mm (0.46λ g ), the width W is 1.23mm (0.85λ g ). The length L of a parasitic patch 3 grounded at one end 2 0.3mm (0.2λ g ), width W 2 1.23mm (0.85λ g ). The length L of the parasitic metal strip 4 1 0.65mm (0.45λ g ), width W 1 0.07mm (0.05λ g ). The gap width G between the rectangular patch antenna 1 and the parasitic patch 3 grounded at one end 1 0.1mm (0....

Embodiment 3

[0042] to combine Figure 8 , the microstrip antenna includes a rectangular patch antenna 1, a feeding microstrip line 2, a parasitic patch 3 grounded at one end, a parasitic metal strip 4, a grounded metal post 5, a dielectric substrate 6, and a GSG structure required for probe measurement 7 and metal floor 8. The parasitic patch 3 with one end grounded is connected to the metal floor 8 through the ground metal post 5 . Two parasitic metal strips 4 are respectively printed along the non-radiating sides of the rectangular patch antenna 1 . Wherein the length L of the rectangular microstrip antenna 1 is 0.62mm (0.43λ g ), the width W is 0.8mm (0.55λ g ). The length L of a parasitic patch 3 grounded at one end 2 0.27mm (0.19λ g ), width W 2 0.8mm (0.55λ g ). The length L of the parasitic metal strip 4 1 0.75mm (0.52λ g ), width W 1 0.12mm (0.08λ g ). The gap width G between the rectangular patch antenna 1 and the parasitic patch 3 grounded at one end 1 0.15mm (0.1...

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Abstract

The invention discloses a parasitic-patch-loaded high-gain microstrip antenna based on GaN processing technology. The rectangular patch antenna is printed at the upper surface center of a dielectric substrate. The antenna is fed through a feeding microstrip line in an insertion feeding manner. The feeding microstrip line is perpendicular to the radiation edge of the patch antenna. The other end of the feeding microstrip line is connected with a GSG structure; the GSG structure is located at the edge of the dielectric substrate. The parasitic metal strip is parallel with the non-radiation edge of the rectangular patch antenna and is divided symmetrically by the straight line where the feeding microstrip line is located. The other radiation edge outer side of the rectangular patch antenna is provided with a parasitic patch, one end of which is grounded through a grounding metal column. The bottom part of the dielectric substrate is provided with a metal floor plate. According to the invention, the gain of the antenna is increased while the compactness of the antenna structure is maintained. The processing of the antenna is easy; the cost of doing so is small; therefore, the antenna can be produced on a large scale.

Description

technical field [0001] The invention relates to a microstrip antenna, in particular to a parasitic patch-loaded high-gain microstrip antenna based on GaN processing technology. Background technique [0002] Antennas based on GaN processing technology are easy to integrate with MMIC circuits, which can improve the integration of the system, thereby reducing the overall size of the chip and processing costs, so it has become one of the research hotspots in the microwave field in recent years. Since most of the substrate material in GaN processing technology is silicon, the dielectric constant ε of silicon r =11.9, loss tangent tanδ=0.015. In microwave antenna design, the lower the dielectric constant of the substrate where the antenna is located, the better the radiation performance of the antenna. High dielectric constant is not conducive to the radiation of the antenna. In addition, the loss of silicon is large, and it is difficult to obtain a higher gain value. . In addi...

Claims

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Application Information

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IPC IPC(8): H01Q1/38H01Q13/08H01Q1/48
CPCH01Q1/38H01Q1/48H01Q13/08
Inventor 车文荃金华燕杨琬琛范冲杨亚洋
Owner NANJING UNIV OF SCI & TECH
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