Vertical-channel SiC junction gate bipolar transistor and preparation method thereof

A bipolar transistor and junction gate technology, applied in the field of microelectronics, can solve the problems of complex structure, low production cost and yield, and reduce device mobility, so as to avoid the influence of device characteristics and reduce the difficulty of device technology Effect
CN106711207AActive Publication Date: 2017-05-24XIDIAN UNIV
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Applications(China)
Current Assignee / Owner
XIDIAN UNIV
Publication Date
2017-05-24

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Abstract

The invention provides a vertical-channel SiC junction gate bipolar transistor and a preparation method, mainly solves a problem of interface states brought about by an oxide layer of a SiC IGBT (Insulated Gate Bipolar Transistor) device in the prior art, avoids a possibly occurring latch-up effect, reduces processing steps and saves the processing cost at the same time. The characteristics are that a channel structure of a vertical-channel JFET (Junction Field-Effect Transistor) is adopted in a P- drift region to replace an upper structure of the traditional IGBT device, and the width of a channel region of the device is 1-4 microns. The vertical-channel SiC junction gate bipolar transistor provided by the invention has the advantages of simple production process, low cost, high current gain and the like, and can be applied to a stabilized switching power supply, electric energy conversion, automobile electronics, oil drilling equipment and the like.
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Description

technical field

[0001] The invention belongs to the technical field of microelectronics and relates to a semiconductor device, in particular to a silicon carbide bipolar transistor based on a vertical channel junction gate and a preparation method thereof. Background technique

[0002] With the rapid development of power electronics technology, the demand for high-power semiconductor devices is becoming more and more significant. Due to the limitation of materials, the characteristics of traditional silicon devices have reached its theoretical limit. Silicon carbide is a wide bandgap semiconductor material that has been developed rapidly in the past ten years. It has wide bandgap, high thermal conductivity, and high carrier saturation migration. High efficiency, high power density and other advantages, can be applied to high power, high temperature and radiation resistance and other application fields. Among them, IGBT (silicon carbide insulated gate bipolar transistor) is ...

Claims

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