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A method for preparing diamond particles by plasma etching graphite

A technology of diamond particles and plasma, applied in diamond and other directions, can solve the problems of low quality, difficult to disperse, uncontrollable process, etc., and achieve the effects of simple treatment method, simple operation and environmental friendliness

Active Publication Date: 2018-11-02
HARBIN INST OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The present invention aims to solve the problems of high cost, low quality, difficult dispersion, uncontrollable process and limited substrate selection in the existing preparation of artificial diamond, and provides a method for preparing diamond particles by plasma etching graphite

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  • A method for preparing diamond particles by plasma etching graphite
  • A method for preparing diamond particles by plasma etching graphite
  • A method for preparing diamond particles by plasma etching graphite

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specific Embodiment approach 1

[0023] Specific embodiment one: the method for preparing diamond particles by plasma etching graphite described in the present embodiment is specifically carried out according to the following steps:

[0024] 1. Surface treatment of graphite sheet:

[0025] Stick the graphite sheet to the surface layer with scotch tape, and then use absolute ethanol, acetone and deionized water to ultrasonically clean it for 10min to 20min, respectively, to obtain the cleaned graphite sheet, and place the cleaned graphite sheet in a vacuum drying oven to dry. The drying temperature is 60°C-80°C, and the drying time is 15min-30min, and the dried graphite flakes are cooled to room temperature to obtain surface-treated graphite flakes;

[0026] 2. Preparation of diamond on graphite by plasma etching method:

[0027] Place the surface-treated graphite sheet in a microwave plasma chemical vapor deposition device, and deposit it under the conditions of a hydrogen flow rate of 50sccm to 1000sccm, a ...

specific Embodiment approach 2

[0036] Embodiment 2: This embodiment differs from Embodiment 1 in that the graphite flakes described in step 1 are highly oriented pyrolytic graphite flakes, flake graphite flakes, earthy graphite flakes or polycrystalline graphite flakes. Others are the same as in the first embodiment.

specific Embodiment approach 3

[0037] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that: the size of the graphite sheet in step 1 is 10×10×1 mm to 30×30×10 mm. Others are the same as in the first or second embodiment.

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Abstract

The invention provides a method for preparing diamond particles by etching graphite through plasmas and relates to the technical field of growth of diamond micro-powder, aiming at solving the problems of existing preparation of artificial diamonds that the cost is relatively high, the quality is relatively low, the artificial diamond is not easy to disperse, a process is not controllable and the selection of a substrate is limited. The method comprises the following steps: 1, carrying out surface treatment on a graphite sheet; 2, preparing a diamond on graphite by adopting a plasma etching method; 3, dispersing the diamond particles so as to finish the method for preparing the diamond particles by etching the graphite through the plasmas. The invention provides the method for preparing the diamond particles by etching the graphite through the plasmas.

Description

technical field [0001] The invention relates to the technical field of diamond micropowder growth. Background technique [0002] Diamond has excellent physical and chemical properties, such as the highest hardness, chemical stability, thermal conductivity and thermal stability, etc., making it widely concerned and applied in many fields. However, natural diamond reserves in nature are limited, and mining is difficult, which makes natural diamonds expensive and difficult to be used in industrial production. [0003] At present, the artificial preparation of diamond mostly adopts high temperature and high pressure (HPHT) method, using graphite as raw material and catalyst as catalyst to prepare diamond. The diamond prepared by this method contains more impurities (such as catalyst) and structural defects, and the quality is not high, so it is difficult to meet a wide range of applications, especially in high-end fields such as semiconductors. Moreover, the high temperature a...

Claims

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Application Information

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IPC IPC(8): C01B32/26C01B32/28
CPCC01P2002/72C01P2002/82C01P2004/03C01P2004/61
Inventor 朱嘉琦姚凯丽代兵杨磊赵继文舒国阳刘康韩杰才
Owner HARBIN INST OF TECH
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