Unlock instant, AI-driven research and patent intelligence for your innovation.

Ceramic carrier with metal bumps and manufacturing method thereof

A manufacturing method and a technology of metal bumps, which are applied in the field of lasers, can solve problems such as photoresist blistering, degumming, and metal bump corrosion, and achieve the effect of avoiding over-corrosion problems

Active Publication Date: 2019-06-04
GUANGXUN SCI & TECH WUHAN +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] One of the technical problems to be solved by the present invention is how to solve the corrosion of metal bumps that occurs in the prior art when corroding the UBM layer
[0004] The further technical problem to be solved in the present invention is to improve the problem of photoresist foaming and degumming caused by heat in the electroplating process

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ceramic carrier with metal bumps and manufacturing method thereof
  • Ceramic carrier with metal bumps and manufacturing method thereof
  • Ceramic carrier with metal bumps and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Embodiment 1 of the present invention provides a method for manufacturing a ceramic carrier with metal bumps. A dielectric film 22 is grown on the surface 21 of the ceramic sheet, and the dielectric film is silicon oxide; silicon nitride; or silicon oxide and nitride Composite film of silicon. Such as Figure 8 shown, including:

[0049] In step 201 , a conductive metal layer 23 is evaporated or sputtered on the dielectric film 22 .

[0050] Wherein, the evaporation of the conductive metal layer 23 is mainly accomplished by means of electron beam evaporation, and in addition to the above-mentioned electron beam heating means, resistance heating or high-frequency induction heating may also be used.

[0051]Wherein, the sputtering of the conductive metal layer 23 is mainly completed by radio frequency (Radio Frequency, abbreviated as RF) sputtering, magnetron sputtering or ionized metal plasma (Ionized Metal Plasma, abbreviated as IMP) sputtering.

[0052] The conducti...

Embodiment 2

[0073] On the basis of the manufacturing method of the ceramic carrier with metal bumps proposed in Embodiment 1 of the present invention, based on specific processing and production examples, it is possible to give a combination of corresponding parameters and operation modes. The ceramic carrier made by the embodiment of the present invention is suitable for photodetector chip flip-chip technology, especially for compound semiconductor photodetectors, refer to Figure 8-13 , including the following steps.

[0074] In step 301, a dielectric film 22, such as silicon oxide or silicon nitride, is grown on the surface of the ceramic sheet 21 by plasma enhanced chemical vapor deposition (Plasma Enhanced Chemical Vapor Deposition, PECVD for short), with a thickness of 4000 angstroms.

[0075] In step 302, a conductive metal layer 23 is evaporated on the dielectric film 22 by electron beam evaporation, for example: chromium / gold, and its thickness is 700 angstroms / 800 angstroms, whe...

Embodiment 3

[0086] The embodiment of the present invention also provides a ceramic carrier with metal bumps, such as Figure 14 As shown, the ceramic carrier includes a ceramic sheet 21, a dielectric film 22, a conductive metal layer 23, a wire-bonding wire metal layer 24 and a metal bump 25,

[0087] The metal bump 25 is located on the lead-wire metal layer 24, the lead-wire metal layer 24 is located on the conductive metal layer 23, and the dielectric film is located on the conductive metal layer 23 and the ceramic sheet between;

[0088] Wherein, the conductive metal layer 23 is located in the first designated area 51 on the dielectric film;

[0089] Wherein, the wire-bonding wire metal layer 24 is located on the second designated area 52 on the conductive metal layer 23 .

[0090] In combination with the embodiment of the present invention, there is an optional implementation solution, the conductive metal layer 23 is specifically chromium-gold or titanium-gold.

[0091] The cerami...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of a laser, and provides a ceramic slide with metal bumps and a manufacturing method for the ceramic slide. The ceramic slide comprises a ceramic sheet, a dielectric film, a conductive metal layer, a lead-bonding wire metal layer and the metal bumps, wherein the metal bumps are positioned on the lead-bonding wire metal layer; the lead-bonding wire metal layer is positioned on the conductive metal layer; the dielectric film is positioned between the conductive metal layer and the ceramic sheet, wherein the conductive metal layer is positioned on a first designated area on the dielectric film; and the lead-bonding wire metal layer is positioned on a second designated area on the conductive metal layer. According to the embodiments, the metal bumps and the lead-bonding wire metal layer are subjected to photoresist protection before conductive metal layer etching is finally performed, so that an overetching problem in the etching process possibly existing in the prior art can be avoided consequently.

Description

【Technical field】 [0001] The invention relates to the technical field of lasers, in particular to a ceramic carrier with metal bumps and a manufacturing method thereof. 【Background technique】 [0002] In high-speed optical communication technology, a high-speed detector with a high receiving rate is usually required to receive optical signals. High-speed detectors require sufficiently low parasitic capacitance, and high-speed detectors often use backside detection. Therefore, high-speed detectors need to be flip-chip mounted on ceramic carriers with metal bumps. The metal bumps are mainly used for connection, and at the same time, together with the ceramic chip, they play the role of heat dissipation. Usually, the metal bump material is connected to the dielectric layer on the ceramic carrier through multiple metal layers. The multilayer metal layer is called UBM (Under BumpMetalization) layer. The UBM layer mainly plays the role of adhesion, diffusion barrier and wetting...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/15H01L21/48H01S3/02
Inventor 岳爱文胡艳李晶
Owner GUANGXUN SCI & TECH WUHAN