Silicon nanowire-based thin-film silicon crystalline silicon laminated solar photovoltaic cell

Abstract

The invention discloses a silicon nanowire-based thin-film silicon crystalline silicon laminated solar photovoltaic cell, which comprises an NIP amorphous silicon laminated cell located on an upper layer and a PIN heterojunction silicon cell located on a lower layer, wherein the NIP amorphous silicon laminated cell and the PIN heterojunction silicon cell are connected in series through an amorphous silicon tunnel junction; and a silicon nanowire array is arranged on the upper surface of crystalline silicon of an absorption layer of the PIN heterojunction silicon cell. The silicon nanowire array is introduced into the laminated cell, so that the cell has a light trapping advantage of the nanowire array, and relatively high open-circuit voltage and short-circuit current of the laminated cell at the same time.

Description

technical field [0001] The invention relates to the field of novel solar photovoltaic cell structures, in particular to a silicon nanowire-based thin-film silicon crystal silicon laminated solar photovoltaic cell. Background technique [0002] At present, most of the existing laminated battery technologies are laminated batteries based on thin film materials, and the research mainly focuses on multi-component compound laminated batteries, amorphous silicon laminated batteries and dye-sensitized laminated batteries. [0003] Amorphous silicon is a direct bandgap material with a high light absorption coefficient, and a 1-micron thick amorphous silicon film can absorb most of the energy in the visible light of sunlight. However, amorphous silicon materials have obvious light-induced attenuation effect, and the efficiency of photovoltaic cells is greatly attenuated. Using the laminated battery structure, the microcrystalline silicon battery is connected in series under the amor...

AI Technical Summary

Problems solved by technology

[0004] At present, the widely researched amorphous silicon laminated battery has high requirements on the purity of amorphous silicon materials, is expensive, and has obvious light-induced attenuation phenomenon, so it cannot be promoted in the industry.

The nanowire array in the silicon nanowire array battery will greatly increase the surface area of ​​the battery. At the same time, when the nanowires are prepared, a large number of curves will be left on the surface. Therefore, the surface recombination of the nanowire battery is huge, resulting in an extremely weak photo-generated current of the photovoltaic cell and low efficiency of the entire battery.

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