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A kind of LED chip and its manufacturing method

A technology of LED chip and manufacturing method, which is applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems affecting the brightness and luminous efficiency of LED chips, and achieve the effects of improving light extraction efficiency, expanding light emitting area, and achieving low cost

Active Publication Date: 2019-10-29
HC SEMITEK ZHEJIANG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the light emitted under the current blocking layer will be absorbed by the current blocking layer, which will affect the brightness and luminous efficiency of the LED chip.

Method used

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  • A kind of LED chip and its manufacturing method
  • A kind of LED chip and its manufacturing method
  • A kind of LED chip and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] An embodiment of the present invention provides an LED chip, see figure 1 and figure 2 , the LED includes a substrate 1, and an n-type nitride semiconductor layer 2, a light-emitting layer 3, a p-type nitride semiconductor layer 4, a current blocking layer 5, a transparent conductive layer 6, and a p-type nitrogen semiconductor layer stacked on the substrate 1 in sequence. The compound semiconductor layer 4 is provided with a groove extending to the n-type nitride semiconductor layer 2, and the n-type nitride semiconductor layer 2, the sidewall of the groove, and the transparent conductive layer 6 are provided with a passivation layer 7, and the transparent conductive layer 6 The passivation layer 7 on the top is provided with a first through hole extending to the p-type nitride semiconductor layer 4, the p-type electrode 8 is arranged in the first through hole, and the passivation layer 7 on the n-type nitride semiconductor layer 2 There is a second through hole exte...

Embodiment 2

[0041] The embodiment of the present invention provides a method for manufacturing an LED chip, see image 3 , the production method includes:

[0042] Step 201: Epitaxially grow an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer on a substrate in sequence.

[0043] Specifically, the substrate can be a sapphire substrate, or a nitride semiconductor, such as SiN, GaN; the n-type nitride semiconductor layer can be an n-type doped GaN layer; the light-emitting layer can include alternately stacked InGaN quantum well layers and The GaN quantum barrier layer; the p-type nitride semiconductor layer may be a p-type doped GaN layer.

[0044] Step 202: Opening a groove extending to the n-type nitride semiconductor layer on the p-type nitride semiconductor layer.

[0045] Step 203 : forming a current blocking layer on the p-type nitride semiconductor layer, in which there are via holes extending to the p-type gallium nitride semicon...

Embodiment 3

[0058] The embodiment of the present invention provides a method for manufacturing an LED chip, which is a specific implementation of the method provided in Embodiment 2. The method includes:

[0059] Step 301: Epitaxially grow an n-type nitride semiconductor layer, a light-emitting layer, and a p-type nitride semiconductor layer on the substrate by metal-organic chemical vapor deposition to form an epitaxial wafer.

[0060] Step 302: cleaning the epitaxial wafer, and opening a groove extending to the n-type nitride semiconductor layer on the p-type nitride semiconductor layer by using photolithography technology and dry etching technology.

[0061] Step 303: Deposit a silicon dioxide film on the epitaxial wafer by chemical vapor deposition technology, and wet-etch under the protection of the positive photoresist to form a current blocking layer covered with the third through hole, and remove the positive photoresist, the first step The cross-section of the three-way hole is a...

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Abstract

The invention discloses an LED chip and a manufacturing method therefor, and belongs to the technical field of a semiconductor. The LED chip comprises a substrate, and an n type nitride semiconductor layer, a light emitting layer, a p type nitride semiconductor layer, a current barrier layer and a transparent conductive layer which are laminated on the substrate in sequence; a groove which extends to the n type nitride semiconductor layer is formed in the p type nitride semiconductor layer; a passivation layer is arranged on the n type nitride semiconductor layer, the side wall of the groove and the transparent conductive layer; a first through hole which extends to the p type nitride semiconductor layer is formed in the passivation layer on the transparent conductive layer; a p type electrode is arranged in the first through hole; a second through hole which extends to the n type nitride semiconductor layer is formed in the passivation layer on the n type nitride semiconductor layer; an n type electrode is arranged in the second through hole; and a plurality of third through holes which extend to the p type nitride semiconductor layer are formed in the current barrier layer. According to the LED chip, light rays emitted below the current barrier layer can pass through the third through holes to be emitted, so that light output and luminance can be improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an LED chip and a manufacturing method thereof. Background technique [0002] Light Emitting Diode (English: Light Emitting Diode, referred to as: LED) has become the focus of attention due to its advantages of low energy consumption, no pollution, high brightness, and long life. It is used in lighting, backlight, screen display, automotive, medical and other fields. [0003] White light LEDs are usually obtained by exciting phosphors with GaN-based LED chips. The GaN-based LED chips are mainly realized by the following steps: growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a sapphire substrate in sequence; Form a groove extending to the n-type nitride semiconductor layer on the p-type nitride semiconductor layer by photolithography; use photolithography to form a current blocking layer on the p-type nitride semic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/14
CPCH01L33/145
Inventor 于娜田艳红顾小云王力明
Owner HC SEMITEK ZHEJIANG CO LTD