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Composite quantum dot light emitting diode device and preparation method thereof

A quantum dot light-emitting and composite light-emitting layer technology, applied in the field of quantum dots, can solve the problems of low luminous efficiency and high turn-on voltage of light-emitting diodes, and achieve the effects of improving interface properties, reducing turn-on voltage, and enhancing luminous efficiency

Active Publication Date: 2017-05-31
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a composite quantum dot light-emitting diode device and a preparation method thereof, aiming at solving the problem of low luminous efficiency still existing in light-emitting diodes based on organic-inorganic hybrid perovskite materials. high voltage problem

Method used

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  • Composite quantum dot light emitting diode device and preparation method thereof
  • Composite quantum dot light emitting diode device and preparation method thereof
  • Composite quantum dot light emitting diode device and preparation method thereof

Examples

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Effect test

Embodiment 1

[0056] The structure of the QLED device is described as: glass substrate / ITO / PEDOT:PSS / TFB / CdSe@ZnS / CH 3 NH 3 PbBr 3 / ZnO / Al, its preparation method is as follows:

[0057] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0058]b. Spin-coat a TFB layer on the PEDOT:PSS layer;

[0059] c. Spin-coat a layer of CdSe@ZnS quantum dots on the TFB layer, and then spin-coat a layer of CH on the quantum dot layer 3 NH 3 PbBr 3 Organic-inorganic hybrid perovskite layer to obtain a quantum dot composite light-emitting layer;

[0060] d. Next, spin-coat a layer of ZnO on the quantum dot composite luminescent layer;

[0061] e. Finally, a layer of Al is evaporated on ZnO to obtain a quantum dot light-emitting diode device.

Embodiment 2

[0063] The structure of the QLED device is described as: glass substrate / ITO / PEDOT:PSS / TFB / CH 3 NH 3 PbBr 3 / CdSe@ZnS / ZnO / Al, its preparation method is as follows:

[0064] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0065] b. Spin-coat a TFB layer on the PEDOT:PSS layer;

[0066] c. Spin-coat a layer of CH on the TFB layer 3 NH 3 PbBr 3 Organic-inorganic hybrid perovskite layer, and then spin-coat a layer of CdSe@ZnS quantum dot layer on the organic-inorganic hybrid perovskite layer to obtain a quantum dot composite light-emitting layer;

[0067] d. Next, spin-coat a layer of ZnO on the quantum dot composite luminescent layer;

[0068] e. Finally, evaporate a layer of Al on the ZnO to obtain a quantum dot light-emitting diode.

Embodiment 3

[0070] The structure of the QLED device is described as: glass substrate / ITO / PEDOT:PSS / TFB / CH 3 NH 3 PbBr 3 &CdSe@ZnS / ZnO / Al, its preparation method is as follows:

[0071] a. Spin-coat one deck of PEDOT on ITO substrate:PSS thin film is used as hole injection layer;

[0072] b. Spin-coat a TFB layer on the PEDOT:PSS layer;

[0073] c. First combine CdSe@ZnS quantum dots with CH 3 NH 3 PbBr 3 The organic-inorganic hybrid perovskite material is mixed uniformly at a ratio of 0.1:1, dissolved in a mixed solvent of n-hexane and N,N-dimethylformamide, and then the mixed solution is spin-coated on the TFB layer to obtain Quantum dot composite luminescent layer;

[0074] d. Next, spin-coat a layer of ZnO on the quantum dot composite luminescent layer;

[0075] e. Finally, evaporate a layer of Al on the ZnO to obtain a quantum dot light-emitting diode.

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Abstract

The invention discloses a composite quantum dot light emitting diode device and a preparation method thereof. The device comprises an anode substrate, a hole injection layer, a hole transport layer, a luminous layer, an electron transport layer and a cathode layer, wherein the luminous layer is a quantum dot composite luminous layer composed of a quantum dot luminescent material and an organic-inorganic hybrid perovskite material. According to the composite quantum dot light emitting diode device provided by the invention, because the quantum dot luminescent material can produce a synergistic effect with organic-inorganic hybrid perovskite material, the excited state complex electroluminescence is produced, which not only enhances the luminous efficiency of a QLED (Quantum dot light-emitting diode) device and reduces the turn-on voltage of the device, but also enables the QLED device to display light of different colors by changing the bias voltage, moreover, for quantum dot composite luminescent layers with different structures, the applied bias voltage has different degrees of regulation function to the luminous color of the QLED devices; and in addition, the introduction of an organic-inorganic hybrid perovskite layer can also improve the interface property, luminescence uniformity and device stability of the QLED device.

Description

technical field [0001] The invention relates to the technical field of quantum dots, in particular to a composite quantum dot light-emitting diode device and a preparation method thereof. Background technique [0002] Semiconductor quantum dots (Quantum dots, QDs) have the characteristics of high fluorescence quantum efficiency, adjustable luminescence in the visible light band, and wide color gamut coverage. Light-emitting diodes with quantum dots as light-emitting materials are called quantum dot light-emitting diodes (Quantum dot light-emitting diodes, QLEDs), which have the advantages of color saturation, higher energy efficiency, better color temperature, and long life, and are expected to become the next generation of solid-state lighting. And the mainstream technology of flat panel display. [0003] In the traditional QLED device structure, in addition to the quantum dot light-emitting layer, it is necessary to introduce two electrodes and add various functional laye...

Claims

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Application Information

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IPC IPC(8): H01L51/54H01L51/50H01L51/56B82Y30/00
CPCB82Y30/00H10K85/30H10K50/115H10K2102/00H10K71/00H10K85/50
Inventor 梁柱荣曹蔚然
Owner TCL CORPORATION
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