A kind of preparation method of PD nanoparticle surface modification ZNO nanowire gas-sensing material
A technology for surface modification and gas-sensing materials, which is applied in the field of preparation of ZnO nanowire gas-sensing materials modified on the surface of Pd nanoparticles, can solve the problems of uneven modification, uncontrollable modification, and low modification efficiency, and achieves controllable preparation and particle size. The effect of uniform diameter and large quantity
Active Publication Date: 2019-06-21
SHENZHEN UNIV
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[0004] The purpose of the present invention is to provide a preparation method of Pd nanoparticles surface modified ZnO nanowire gas-sensitive material, aiming to solve the technical problems of uneven modification, low modification efficiency and uncontrollable modification of the traditional Pd nanoparticle modified ZnO nanowire method
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[0039] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary and are intended to explain the present invention and should not be construed as limiting the present invention.
[0040] Such as Figure 1 to Figure 2 As shown, the preparation method of the Pd nanoparticle surface-modified ZnO nanowire gas-sensitive material provided by the embodiment of the present invention includes the following steps: S1: using the method of resistive thermal evaporation on SiO 2 Deposit a layer of Au film on / Si substrate; S2: grow ZnO nanowire on described Au film with the method for chemical vapor deposition, obtain ZnO nanowire array; S3: use the method for physical vapor deposition on described ZnO nanowire A laye...
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Abstract
The invention relates to the field of gas-sensing materials, in particular to a preparation method of a Pd nano-particle surface modified ZnO nanowire gas-sensing material. The method mainly comprises the following steps that a layer of Au film is deposited on an SiO2 / Si substrate through a resistance-type heat evaporation method; an ZnO nanowire is grown on the Au film through a chemical vapor deposition method, so that an ZnO nanowire array is obtained; the surface of the Zn nanowire is wrapped with a layer of Pd film through a physical vapor deposition method, so that an ZnO nanowire array sample wrapped with the Pd film is obtained; and the ZnO nanowire array sample wrapped with the Pd film is put into a high-temperature pipe furnace to be subjected to high temperature annealing, so that the Pd nano-particle surface modified ZnO nanowire gas-sensing material is obtained. Compared with a traditional chemical method, Pd nano-particles of the sample, which are obtained through the method, are uniform in diameter, large in number and controllable in preparation.
Description
technical field [0001] The invention relates to the field of gas-sensing materials, in particular to a method for preparing a ZnO nanowire gas-sensing material modified on the surface of Pd nanoparticles. Background technique [0002] Gas sensors with ZnO (zinc oxide) nanowire structure have been prepared one after another, and the prepared gas sensors show good gas sensing performance, which can be used for detection and monitoring of flammable gases and toxic and harmful gases. However, the traditional ZnO nanowire gas sensor has problems such as low sensitivity, high working temperature and slow response. At present, the performance of ZnO nanowire gas sensor can be improved by surface modification of noble metal nanoparticles. Among them, the traditional chemical method is used to modify ZnO nanowires with noble metal Pd (palladium) nanoparticles, and the sensitivity, gas selectivity, stability and responsivity of the prepared gas sensor are all improved. However, ZnO n...
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IPC IPC(8): C23C14/16C23C14/18C23C14/26C23C16/40C23C14/58C23C14/35C23C28/00C23C14/28G01N33/00B82Y30/00B82Y40/00B82Y15/00
CPCB82Y15/00B82Y30/00B82Y40/00C23C14/16C23C14/18C23C14/185C23C14/26C23C14/28C23C14/35C23C14/5806C23C16/407C23C28/322C23C28/345G01N33/0027
Inventor 曹培江杨志博朱德亮吕有明刘新科
Owner SHENZHEN UNIV