A kind of plasma source and coating machine

Abstract

The invention provides a plasma source. The plasma source comprises a housing, a plasma generating chamber formed in the housing and used for providing a plasma generating area, a gas supply device connected with the plasma generating chamber and used for supplying process gas to the plasma generating chamber, an electrode arranged at the position, close to the plasma generating chamber, outside the plasma generating chamber and used for ionizing the process gas to generate plasma, first and second magnets for generating an indoor magnetic field in the plasma and arranged at the positions, close to the side wall and the bottom surface of the plasma generating chamber, outside the plasma generating chamber, a grid mesh structure arranged at an opening of the plasma generating chamber and used for pulling out and accelerating ions, and a radio-frequency power supply connected with the electrode and used for providing radio-frequency power for the electrode. The invention further provides a film plating machine. By adopting the plasma source and the film plating machine, the ionization efficiency of plasma can be effectively improved, and ion energy can be controlled.

Description

technical field [0001] The invention relates to the field of plasma technology, in particular to a plasma source and a coating machine. Background technique [0002] Ion sources are widely used in material surface treatment processes in semiconductor, microelectronics, precision optics and other industries, including ion pre-cleaning, ion beam sputtering, ion beam etching, and CVD film forming processes. Common ion sources currently on the market include Hall source, Kaufmann source, anode layer ion source, radio frequency ion source, microwave ion source, etc. Among them, the radio frequency ion source has the best performance. [0003] RF ion sources generally use a quartz cup as the plasma generation chamber. When the radio frequency ion source works, the process gas is first introduced into the plasma generation chamber, and then the process gas is ionized by feeding radio frequency power into the plasma generation chamber to generate ions and electrons. A grid struct...

AI Technical Summary

Problems solved by technology

There are two problems with the neutralizer: First, the cost of the neutralizer is usually relatively high. Taking Veeco’s radio frequency ion source neutralizer as an example, the price is about 5,000 RMB, and the neutralizer needs DC and RF to work. Power supply, these will undoubtedly increase the cost of the radio frequency ion source; the second is that the neutralizer has a certain life, the current commonly used neutralizer lasts for 150 hours to 200 hours, if a certain process needs to use the radio frequency ion source to achieve , and the duration of the process exceeds the working time range of the neutralizer, then the process must be suspended and the neutralizer must be replaced during the execution of the process, so that the workpiece will be exposed to the air, which is for It is very unfavorable in terms of workmanship

[0006] Second, because the electrons in the plasma generation chamber are not constrained, electrons and ions are easy to recombine on the side wall of the quartz cup, which leads to a decrease in the number of ions, which in turn leads to a decrease in the ionization rate

[0007] Third, in the prior art, many holes are set on the grid to allow ions to pass through, but due to the small area of ​​the holes, the ions are easily bombarded on the grid, which affects the ion output

Once the grid deformation is relatively large, the entire grid structure needs to be replaced, and the RF ion source has very high requirements for the processing accuracy of the grid structure, resulting in a high cost of the grid structure. Usually, the price of a set of grid structure is 100,000 Between RMB 200,000, this will greatly increase the cost of the ion source

In addition, since the grid structure needs to be connected to positive and negative voltages, the radio frequency ion source needs two DC power supplies in addition to the radio frequency power supply for ionizing the process gas during operation, which is also necessary to a certain extent. Will lead to increased cost of RF ion source

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