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Array substrate and preparation method thereof and display panel

A technology for array substrates and displays, applied in optics, instruments, electrical components, etc., can solve problems such as difficult to obtain dark state display, large leakage current, and large leakage current

Active Publication Date: 2017-06-13
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In polysilicon TFT, polysilicon material is used as the active layer, and its carrier mobility can reach 100cm 2 / V·s or more, but the polysilicon material is limited by the grain cracking during the laser crystallization process of amorphous silicon, and there will be a large leakage current. Therefore, when it is used as a current-driven TFT, there will be leakage current Big, and hard to get a good dark state display

Method used

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  • Array substrate and preparation method thereof and display panel
  • Array substrate and preparation method thereof and display panel
  • Array substrate and preparation method thereof and display panel

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Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] An embodiment of the present invention provides an array substrate, including a substrate, a double-gate oxide TFT disposed in each sub-pixel on the substrate, and a display electrode; the drain of the double-gate oxide TFT is electrically connected to the display electrode ; On this basis, the array substrate further includes a polysilicon TFT disposed on the substrate.

[0043] One reason why the threshold voltage stability is not good due to the sing...

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Abstract

The embodiment of the invention provides an array substrate and a preparation method thereof and a display panel and relates to the technical field of display. The display panel has good display performance by adopting two types of TFTs on the array substrate. The array substrate comprises a substrate, double-gate oxide TFTs, a display electrode and a polysilicon TFT arranged on the substrate, wherein one double-gate oxide TFT is arranged in each sub-pixel on the substrate; and a drain of each double-gate oxide TFT is electrically connected with the display electrode.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display panel. Background technique [0002] Currently, thin film transistors (Thin Film Transistor, TFT for short) are the core of display devices, and mainly include the following types: amorphous silicon thin film transistors, polysilicon thin film transistors and oxide thin film transistors. [0003] Among them, the amorphous silicon material is used as the active layer in the amorphous silicon TFT, and its carrier mobility is only 0.5cm 2 / V·s~1.0cm 2 / V·s, which cannot satisfy large-size, high-resolution display devices. [0004] Oxide semiconductor materials are used as the active layer in oxide TFTs. Compared with amorphous silicon materials, they have higher carrier mobility, but there is a problem of threshold voltage stability. In practical applications, characteristic drift often occurs . [0005] In...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12
CPCH01L27/1251H01L27/1259H10K59/12G02F2202/104G02F1/1368H01L27/1225H10K59/1213G02F1/13685G02F1/13624
Inventor 曲连杰贵炳强齐永莲赵合彬邱云王丹
Owner BOE TECH GRP CO LTD
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