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A kind of array substrate and its preparation method, display panel

A technology for array substrates and displays, applied in instruments, semiconductor devices, electrical components, etc., can solve the problems of large leakage current, large leakage current, and difficulty in obtaining dark state display.

Active Publication Date: 2019-05-10
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In polysilicon TFT, polysilicon material is used as the active layer, and its carrier mobility can reach 100cm 2 / V·s or more, but the polysilicon material is limited by the grain cracking during the laser crystallization process of amorphous silicon, and there will be a large leakage current. Therefore, when it is used as a current-driven TFT, there will be leakage current Big, and hard to get a good dark state display

Method used

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  • A kind of array substrate and its preparation method, display panel
  • A kind of array substrate and its preparation method, display panel
  • A kind of array substrate and its preparation method, display panel

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Embodiment Construction

[0041] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0042] An embodiment of the present invention provides an array substrate, including a substrate, a double-gate oxide TFT disposed in each sub-pixel on the substrate, and a display electrode; the drain of the double-gate oxide TFT is electrically connected to the display electrode ; On this basis, the array substrate further includes a polysilicon TFT disposed on the substrate.

[0043] One reason why the threshold voltage stability is not good due to the sing...

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Abstract

Embodiments of the present invention provide an array substrate, a preparation method thereof, and a display panel, which relate to the field of display technology. By using two types of TFTs on the array substrate, the display panel can have good display performance. The array substrate includes a substrate, a double-gate oxide TFT disposed in each sub-pixel on the substrate, and a display electrode; the drain of the double-gate oxide TFT is electrically connected to the display electrode; It also includes a polysilicon TFT arranged on the substrate.

Description

technical field [0001] The present invention relates to the field of display technology, in particular to an array substrate, a preparation method thereof, and a display panel. Background technique [0002] Currently, thin film transistors (Thin Film Transistor, TFT for short) are the core of display devices, and mainly include the following types: amorphous silicon thin film transistors, polysilicon thin film transistors and oxide thin film transistors. [0003] Among them, the amorphous silicon material is used as the active layer in the amorphous silicon TFT, and its carrier mobility is only 0.5cm 2 / V·s~1.0cm 2 / V·s, which cannot satisfy large-size, high-resolution display devices. [0004] Oxide semiconductor materials are used as the active layer in oxide TFTs. Compared with amorphous silicon materials, they have higher carrier mobility, but there is a problem of threshold voltage stability. In practical applications, characteristic drift often occurs . [0005] In...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/12
CPCH01L27/1251H01L27/1259G02F2202/104G02F1/1368H01L27/1225H10K59/1213G02F1/13685G02F1/13624H10K59/12
Inventor 曲连杰贵炳强齐永莲赵合彬邱云王丹
Owner BOE TECH GRP CO LTD
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