A light-tunable vertical spin field effect transistor and its preparation method

Abstract

The invention provides a light-controlled vertical spin field-effect transistor. A middle layer is a non-magnetic semiconductor layer, and ferromagnetic thin films are arranged on the upper side and the lower side of the non-magnetic semiconductor layer respectively. The non-magnetic semiconductor layer is a gallium arsenide substrate, and electrodes are led out from the ferromagnetic thin films. The ferromagnetic thin films with perpendicular magnetic anisotropy are used for generating spin electrons in the vertical direction. Amorphous ferromagnetic material CoFeB thin films are used, the thickness of the thin films is 1-2 nm, and the perpendicular magnetic anisotropy is induced through the interface effect of MgO and Ta. When the spin direction of the electrons generated through light is parallel to the spin direction of ferromagnetic layers, the resistance is minimum and the generated current is maximum; otherwise, when the spin direction of the electrons generated through the light is opposite to the spin direction of ferromagnetic metal, the resistance is maximum and the generated current is minimum. The vertical spin field-effect transistor is controlled to be switched on and off through an optical method, and the transistor has the information storage function and the information processing function at the same time.

Description

technical field [0001] The invention relates to a microelectronic device, in particular to a spin field effect transistor with a vertical structure prepared based on an optical spin injection method combined with a micro-processing technology, which can simultaneously process and store data. Background technique [0002] Spintronics is an important emerging discipline in recent years. It is mainly committed to changing the status quo of traditional semiconductor storage, and is committed to developing the next generation of spin-related information storage and processing chip devices. The origin of spintronics begins with the discovery of the Giant Magnetoresistance (GMR) effect of metal nano-multilayers and its important applications in the fields of sensors and magnetic storage technologies. The discoverers of this effect - French scientist Albert Fert and German scientist Peter Grunberg won the 2007 Nobel Prize in Physics. Starting from this, the research results of spin...

AI Technical Summary

Problems solved by technology

[0004] We know that spintronic devices that generate spin currents parallel to the device surface by electrically injecting spintronics have been experimentally confirmed and observed in large numbers, but spin field effect transistors with vertical structures are still seldom studied.

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