ga 2 o 3 Schottky diode device structure and fabrication method

A Schottky diode and device structure technology, applied in the field of microelectronics, can solve the problems of increased parasitic effect and increased parasitic capacitance, and achieve the effects of stable physical and chemical properties, reduction of peak electric field, and perfect lattice structure

Active Publication Date: 2019-07-16
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the field plate structure introduces the dielectric layer, it will inevitably lead to the enhancement of the parasitic effect, resulting in an increase in the parasitic capacitance

Method used

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  • ga <sub>2</sub> o <sub>3</sub> Schottky diode device structure and fabrication method
  • ga <sub>2</sub> o <sub>3</sub> Schottky diode device structure and fabrication method
  • ga <sub>2</sub> o <sub>3</sub> Schottky diode device structure and fabrication method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] Example 1, Schottky diodes with groove number M=4, groove depth of 30 nm, width of 2 μm, and groove pitches increasing by 0.3 μm were fabricated.

[0031] Step 1, cleaning, such as figure 2 (a).

[0032] Ga has been epitaxially grown on the substrate 2 o 3 The samples were cleaned organically under the conditions of ultrasonication of acetone solution for 5 minutes, ultrasonic solution of ethanol solution for 5 minutes, and then cleaned with deionized water, and then put into HF:H 2 Erosion was carried out in a solution of O=1:1 for 50s, and finally cleaned with flowing deionized water and dried with high-purity nitrogen.

[0033] Step 2, etch, such as figure 2 (b).

[0034] Put the cleaned sample face down into the ICP etching reaction chamber, and slightly etch the lower surface of the substrate. The process conditions are: the power of the upper electrode is 100W, the power of the lower electrode is 10W, the pressure of the reaction chamber is 30Pa, BCl 3 The...

Embodiment 2

[0049] Example 2, Schottky diodes with groove number M=5, groove depth of 40 nm, width of 2.5 μm, and groove pitches increasing by 0.4 μm were fabricated.

[0050] Step one, cleaning.

[0051] The specific implementation of this step is the same as step 1 of Embodiment 1.

[0052] Step two, etching.

[0053] The specific implementation of this step is the same as that of step 2 in Embodiment 1.

[0054] Step 3, preparing the cathode electrode.

[0055] The specific implementation of this step is the same as that of step 3 in Embodiment 1.

[0056] Step 4, deposit SiO 2 mask.

[0057] The specific implementation of this step is the same as step 4 of Embodiment 1.

[0058] Step five, remove the SiO in the groove etching area 2 mask.

[0059] The specific implementation of this step is the same as that of step 5 in Embodiment 1.

[0060] Step six, etching grooves.

[0061] Put the sample into the ICP etching reaction chamber, the upper electrode power is 100W, the lower...

Embodiment 3

[0068] Example 3, Schottky diodes with groove number M=6, groove depth of 50 nm, width of 3 μm, and groove pitches increasing by 0.5 μm were fabricated.

[0069] Step A, wash.

[0070] The specific implementation of this step is the same as step 1 of Embodiment 1.

[0071] Step B, etching.

[0072] The specific implementation of this step is the same as that of step 2 in Embodiment 1.

[0073] Step C, preparing a cathode electrode.

[0074] The specific implementation of this step is the same as that of step 3 in Embodiment 1.

[0075] Step D, depositing SiO 2 mask.

[0076] The specific implementation of this step is the same as step 4 of Embodiment 1.

[0077] Step E, removing the SiO in the groove etching area 2 mask.

[0078] The specific implementation of this step is the same as that of step 5 in Embodiment 1.

[0079] Step F, etching grooves.

[0080] Put the sample into the ICP etching reaction chamber, the upper electrode power is 100W, the lower electrode p...

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Abstract

The invention discloses a Ga 2 o 3 The Schottky diode device structure and manufacturing method mainly solve the problems of low reverse breakdown voltage of the existing Schottky diode device and large parasitic capacitance in the field plate structure. It is bottom-up, including cathode electrode, highly doped n-type Ga 2 o 3 Substrate, low-doped n-type Ga 2 o 3 Epitaxial layer, anode electrode; the part of the anode in contact with the epitaxial layer forms a Schottky contact, the cathode forms an ohmic contact with the substrate, and the low-doped n-type Ga 2 o 3 There are multiple grooves distributed on the epitaxial layer at intervals, and the pitch of the grooves increases sequentially in the range of 0.3 μm to 0.5 μm, and the first groove is located directly below the edge of the anode, and the last groove is connected to the first groove. The distance is 10 μm to 15 μm, and an AlGaO layer with an Al composition greater than 20% is epitaxially grown inside the groove. The invention improves the reverse breakdown voltage, reduces the parasitic capacitance, and keeps the forward characteristic unchanged, and can be used in high-speed integrated circuits and microwave technology.

Description

technical field [0001] The invention belongs to the technical field of microelectronics, and in particular relates to a Schottky diode, which is used in high-speed integrated circuits and microwave technology. Background technique [0002] Schottky diodes are manufactured on the principle that a Schottky barrier is formed by the contact between a metal and a semiconductor, and the Schottky barrier acts as a rectifier. Compared with pn junction diodes, Schottky diodes have the advantages of lower turn-on voltage and faster switching speed, so they are widely used in high-speed integrated circuits, microwave technology and other fields. However, since the electric field of the Schottky diode is mainly concentrated in the edge region of the Schottky contact, when the electric field in this region reaches the breakdown field strength of the material, the device is prone to breakdown in this region, while the electric field in the rest of the region is smaller than that of the ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/34
CPCH01L29/0615H01L29/66969H01L29/872H01L29/24
Inventor 冯倩邢翔宇韩根全李翔方立伟黄璐张进成郝跃
Owner XIDIAN UNIV
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