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Preparation method for cerium oxide and application of cerium oxide to STI chemico-mechanical polishing

A cerium oxide, cerium source technology, applied in chemical instruments and methods, rare earth metal oxides/hydroxides, inorganic chemistry, etc., can solve problems such as unfavorable wastewater treatment and discharge, cerium carbonate particle size, crystallinity regulation, etc. The effect of excellent planarization polishing efficiency

Active Publication Date: 2017-07-04
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The reported synthesis methods of crystalline cerium carbonate mainly include the direct high-temperature hydrothermal method, or by adding a large amount of organic additives to promote the transformation of the cerium carbonate produced by the reaction to the hexagonal or orthorhombic phase crystal form. However, such methods are difficult to realize the synthesis of The particle size and crystallinity of cerium carbonate are controlled, and the introduction of organic reagents is not conducive to the treatment and discharge of wastewater generated during the synthesis process

Method used

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  • Preparation method for cerium oxide and application of cerium oxide to STI chemico-mechanical polishing

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] At room temperature, 0.05M cerium nitrate and 0.075M ammonium carbonate were prepared respectively. At 30°C, cerium nitrate was rapidly added to ammonium carbonate, the pH of the precipitation system was adjusted to 6.5, and after stirring for 0.5 hours, the mixed system was transferred to The crystallization reaction was carried out in a hydrothermal reaction kettle at 100°C for 5.0 hours, the obtained precipitate was washed with pure water for 3 times, filtered to obtain a cake, and dried to obtain a hexagonal basic cerium carbonate powder; the obtained cerium carbonate powder was further in Calcined in static air at 500°C for 6.0 hours, and cooled to obtain cerium oxide powder; by adding polyacrylic acid as a dispersant, the obtained cerium oxide powder was subjected to ball-milling dispersion treatment, and by controlling the ball-milling dispersion time, an oxide powder for STI polishing could be obtained. Cerium abrasive.

Embodiment 2

[0021] At room temperature, 1.0M cerium chloride and 4.0M ammonium bicarbonate were prepared respectively. At 60 °C, cerium nitrate was rapidly added to ammonium carbonate. After the pH of the precipitation system was adjusted to 10.0, the mixed system was stirred for 1.0 hours. Transferred to a 120°C hydrothermal reactor for crystallization reaction for 3.0 hours, the obtained precipitate was washed 3 times with pure water, filtered to obtain a cake, and dried to obtain hexagonal basic cerium carbonate powder; the obtained cerium carbonate powder Further roasting in static air at 900°C for 1.0 hours, and cooling to obtain cerium oxide powder; by adding polyacrylic acid as a dispersant, the obtained cerium oxide powder is subjected to ball milling and dispersion treatment, and by controlling the ball milling dispersion time, the obtained cerium oxide powder can be applied to STI polishing. cerium oxide abrasive.

Embodiment 3

[0023] At room temperature, 1.0M cerium acetate and 2.0M potassium carbonate were prepared respectively. At 40°C, cerium nitrate was rapidly added to ammonium carbonate, the pH of the precipitation system was adjusted to 9.5, and after stirring for 0.75 hours, the mixed system was transferred to The crystallization reaction was carried out in a hydrothermal reaction kettle at 150°C for 0.5 hours, the obtained precipitate was washed with pure water for 3 times, filtered to obtain a cake, and dried to obtain a hexagonal basic cerium carbonate powder; the obtained cerium carbonate powder was further in Baked in static air at 700°C for 2.0 hours, and cooled to obtain cerium oxide powder; by adding polyacrylic acid as a dispersant, the obtained cerium oxide powder was subjected to ball milling and dispersion treatment, and by controlling the ball milling dispersion time, an oxide powder that can be applied to STI polishing was obtained. Cerium abrasive.

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Abstract

The invention discloses a preparation method for cerium oxide and application of cerium oxide to STI chemico-mechanical polishing. The preparation method comprises the following steps: preparing a low-crystalline cerous carbonate precursor through precipitation; then subjecting the low-crystalline cerous carbonate precursor to crystallization under high-temperature hydrothermal conditions so as to obtain crystalline cerous carbonate; and further carrying out high-temperature roasting on the prepared basic cerous carbonate so as to obtain cerium oxide powder. The cerium oxide particles prepared in the invention can be easily dispersed in a liquid phase under the action of mechanical force. A CMP polishing solution with the dispersed cerium oxide as an abrasive presents excellent planarization polishing efficiency when applied to STI polishing.

Description

technical field [0001] The invention relates to a preparation method of cerium oxide and its application in the field of STI chemical mechanical polishing. Background technique [0002] Nano-cerium oxide has high polishing activity selectively to silica, and can achieve high polishing effect at lower solid content. Therefore, it has received extensive attention as a CMP abrasive in shallow trench isolation (STI) polishing processes. However, compared with traditional silicon oxide or aluminum oxide materials, the CMP polishing liquid using cerium oxide as abrasive also has greater application prospects and market advantages in terms of performance and cost. [0003] Relevant studies have shown that the particle characteristics of cerium oxide abrasives are crucial to their polishing effect. As reported in the literature, in STI polishing applications, the particle size and morphology of cerium oxide have an important impact on the generation of defects during the polishing...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01F17/00C09G1/02
CPCC09G1/02C01F17/206
Inventor 尹先升贾长征
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD