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Preparation method and CMP application of cerium oxide

A technology of cerium oxide and crystallization reaction, applied in chemical instruments and methods, cerium oxide/cerium hydroxide, rare earth metal oxides/hydroxides, etc., can solve environmental pollution hazards, increase production costs and other problems, and achieve high The effect of TEOS polishing rate and

Inactive Publication Date: 2017-07-07
ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of preparing cerium carbonate with these precipitants, a large amount of waste water will inevitably be produced, which will pollute the environment and increase the production cost of the enterprise.

Method used

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  • Preparation method and CMP application of cerium oxide

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] At room temperature, first prepare a 0.05M cerium nitrate solution, and add pure carbon dioxide gas into the above solution by bubbling under the condition of stirring at 100°C while stirring the mixed solution. When no new precipitates are precipitated, stop bubbling and continue Heat preservation and stirring for 1 hour for crystallization reaction, wash the obtained precipitate with pure water 3 times, filter to obtain a filter cake and dry to obtain cerium carbonate powder; the obtained cerium carbonate powder is further roasted in static air at 400°C for 10 hours, cooled Finally, cerium oxide powder is obtained; by adding 0.01% polyacrylic acid as a dispersant, the obtained cerium oxide powder is subjected to ball milling dispersion treatment, and by controlling the ball milling dispersion time, a cerium oxide abrasive that can be applied to STI polishing is obtained.

Embodiment 2

[0024] At room temperature, first prepare a 0.5M cerium acetate solution, and add pure carbon dioxide gas into the above solution by bubbling under the condition of stirring at 60°C, while stirring the mixed solution. When no new precipitates are precipitated, stop bubbling and continue Insulated and stirred for 24 hours for crystallization reaction, the obtained precipitate was washed 3 times with pure water, filtered to obtain a filter cake and dried to obtain cerium carbonate powder; the obtained cerium carbonate powder was further roasted in static air at 900°C for 0.5 hours, cooled Finally, cerium oxide powder is obtained; by adding polyacrylic acid as a dispersant, the obtained cerium oxide powder is subjected to ball milling dispersion treatment, and by controlling the ball milling dispersion time, a cerium oxide abrasive that can be applied to STI polishing is obtained.

Embodiment 3

[0026] At room temperature, first prepare a 1.0M cerium acetate solution, and add pure carbon dioxide gas into the above solution by bubbling under the condition of stirring at 90°C while stirring the mixed solution. When no new precipitates are precipitated, stop bubbling and continue Insulated and stirred for 24 hours for crystallization reaction, the obtained precipitate was washed 3 times with pure water, filtered to obtain a filter cake and dried to obtain cerium carbonate powder; the obtained cerium carbonate powder was further roasted in static air at 600°C for 4 hours, cooled Finally, cerium oxide powder is obtained; by adding polyacrylic acid as a dispersant, the obtained cerium oxide powder is subjected to ball milling dispersion treatment, and by controlling the ball milling dispersion time, a cerium oxide abrasive that can be applied to STI polishing is obtained.

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Abstract

The invention aims to provide a preparation method of a cerium oxide crystal. The preparation method includes preparing cerium carbonate through carbon dioxide bubbling precipitation, and subjecting the cerium carbonate to high-temperature roasting so as to obtain the cerium oxide. The preparation method has the advantages that no ammonia-nitrogen wastewater is produced during preparation, and cerium oxide particles can be dispersed into a liquid phase through mechanical force; CMP (chemical mechanical polishing) solution with the dispersed cerium oxide as an abrasive material shows high planarization polishing efficiency in STI (shallow trench isolation) polishing application.

Description

technical field [0001] The invention discloses a method for preparing cerium oxide powder, in particular to a method for preparing cerium oxide abrasive particles used in STI polishing slurry. Background technique [0002] At present, there have been a lot of reports on the application of cerium oxide as an abrasive in the polishing of shallow trench isolation (STI) process. For example, patent 201310495424.5 reports a chemical mechanical polishing (CMP) composition for shallow trench isolation (STI) process. The composition uses cerium oxide as the abrasive, and the polishing requires a high silicon oxide / silicon nitride polishing selectivity ratio; patent 200510069987.3 discloses a chemical mechanical polishing slurry and a method for polishing a substrate, and the polishing film involved is a silicon oxide layer. This type of material requires that the polishing liquid has a high polishing rate and low defect generation for silicon oxide, and a low polishing rate for sili...

Claims

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Application Information

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IPC IPC(8): C01F17/00C09G1/02C01F17/235C01F17/247
CPCC09G1/02C01F17/247C01F17/235
Inventor 尹先升贾长征
Owner ANJI MICROELECTRONICS TECH (SHANGHAI) CO LTD