Composite system LTCC material, and preparation method thereof

A system, rhombus technology, applied in the field of composite system LTCC materials and their preparation, can solve the problems of increased dielectric loss, high sintering temperature, large doping amount, etc., achieve low dielectric loss, improve the degree of densification, process Engineering simple effects

Inactive Publication Date: 2017-07-14
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology

But Zn 2 SiO 4 A prominent disadvantage of ceramic materials is that the sintering temperature is too high. If the sintering temperature is lowered to 900°C by directly adding oxides or glass, the doping amount needs to be large, which will lead to a significant increase in dielectric loss.

Method used

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  • Composite system LTCC material, and preparation method thereof
  • Composite system LTCC material, and preparation method thereof
  • Composite system LTCC material, and preparation method thereof

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Embodiment Construction

[0023] The present invention will be described in further detail below in conjunction with the embodiments and accompanying drawings.

[0024]Ultra-low loss and low dielectric LTCC microwave dielectric ceramic material, Li 2x (Zn 0.95 co 0.05 ) 2-x SiO 4 , where 0.125≤x≤0.375. The doping amount of the glass flux LMZBS is 1.5wt%, and the raw material Li 2 CO 3 , ZnO, Co 2 o 3 , SiO 2 Moore Billy 2 CO 3 :ZnO:Co 2 o 3 :SiO2 2 =x:(1.9-0.95x):(0.05-0.025x):1 preparation, wherein 0.125≤x≤0.375.

[0025] Its preparation process is as follows figure 1 As shown, the following parameters were used to prepare:

[0026] Step 1, with Li 2 CO 3 , ZnO, Co 2 o 3 , SiO 2 As the initial raw material, mole ratio Li 2 CO 3 :ZnO:Co 2 o 3 :SiO2 2 =x: (1.9-0.95x): (0.05-0.025x): 1 for batching. Milled in a planetary ball mill for 6 hours at a time, the material after ball milling was placed in an oven and dried at 120°C, and the molecular structure expression formed was Li...

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Abstract

The invention belongs to the field of electronic ceramic material and manufacturing of electronic ceramic material, and more specifically relates to a composite system LTCC material, and a preparation method thereof. The general chemical formula of the composite system LTCC material is Li<2x>(Zn<0.96>Co<0.05>)<2-x>SiO<4-y>LMZBS (0.125<=x<=0.375, and y ranges from 1 to 2wt%); the principal crystalline phase is (Zn,Co)<2>SiO<4> with a rhombohedron structure; the secondary crystalline phase is Li<1.6>Zn<1.2>SiO<4> with an orthorhombic system structure; the composite system LTCC material is prepared via low temperature sintering at 900 to 950 DEG C; the dielectric constant epsilon<r> ranges from 6.1 to 6.5; the Q*f value is higher than 130000GHz, and the highest Q*f value is 230602GHz; the temperature coefficient of resonance frequency tau<f> ranges from -41 to -22ppm/DEG C. The raw materials are cheap; the preparation method is simple; operation is convenient; production cost is low; and the composite system LTCC material is capable of reducing the loss of microwave devices or modules as a LTCC microwave medium or device.

Description

technical field [0001] The invention belongs to the field of electronic ceramic materials and its manufacture, and in particular relates to a composite system LTCC material and a preparation method thereof. Background technique [0002] In recent years, whether it is general-purpose electronic machines, communication equipment or consumer electronic products in the world, they are rapidly developing in the direction of miniaturization, light weight, integration, multi-function and high reliability. LTCC (Low Temperature Co-fired Ceramics) technology, as an advanced three-dimensional assembly and integration technology, has created conditions for the development of passive devices and passive / active device hybrid integration, and has been rapidly obtained in stacked chip passive devices. a wide range of applications. Many electronic materials and components manufacturers and universities have developed and produced various LTCC chip passive devices and components. In order t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/16C04B35/622
CPCC04B35/16C04B35/622C04B2235/3203C04B2235/3275C04B2235/3284C04B2235/365
Inventor 唐晓莉杜祥裕苏桦张怀武荆玉兰李元勋
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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