Active component and preparation method thereof

Abstract

The invention provides an active component and a preparation method thereof. The active component is arranged on a substrate, and comprises a grid electrode, a grid insulating layer, a metal oxide semiconductor layer, an etching stop layer, a source electrode and a drain electrode, wherein the grid insulating layer is arranged on the substrate and covers the grid electrode; the metal oxide semiconductor layer is arranged on the grid insulating layer; the etching stop layer is arranged on the metal oxide semiconductor layer; the edge of the metal oxide semiconductor layer is inwards contracted for a distance compared with the edge of the etching stop layer; the source electrode and the drain electrode are arranged on the etching stop layer, and arranged on the grid insulating layer in a stretching manner along the edge of the etching stop layer and the edge of the metal oxide semiconductor layer; and a part of the etching stop layer is exposed between the source electrode and the drain electrode. Therefore, the active component has good component efficiency.

Description

technical field [0001] The invention relates to a semiconductor element and a manufacturing method thereof, in particular to an active element and a manufacturing method thereof. Background technique [0002] Among the existing metal oxide semiconductor structures, the structure with an etch stop layer is the most widely used, because the structure with an etch stop layer has better device protection and is more stable with respect to device characteristics. [0003] There are two common structures of metal oxide semiconductors with an etch stop layer, one is a metal oxide semiconductor structure of a full type etch stop layer (full type ESL), and the other is a partially covered type Etch stop layer (non-full type ESL) metal oxide semiconductor structure. The metal-oxide-semiconductor structure of the full-type ESL (full type ESL) has contact windows with source and drain electrodes on the device, so the pitch of the channel layer cannot be reduced, thereby affecting the p...

AI Technical Summary

Problems solved by technology

The metal oxide semiconductor structure of the full type ESL (full type ESL) has contact windows with source and drain electrodes on the device, so the pitch of the channel layer cannot be reduced, which in turn affects the pixel aperture ratio

On the other hand, the partial coverage type etch stop layer (non-full type ESL) metal oxide semiconductor structure, in the manufacturing process, because the etch stop layer needs to be etched in a large area, the surface of the semiconductor channel layer is bombarded by dry etching , it is easy to affect the contact characteristics of the subsequently formed source and drain contact windows

Furthermore, the etching selectivity ratio of the dry etching gas to the etch stop layer and the gate insulating layer is low, and the gate insulating layer is bombarded and pierced or is too thin to easily cause a short circuit between the source and the gate, which is difficult to control in the process

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