Preparation method of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

A single-walled carbon nanotube, semiconducting technology, applied in the field of controllable preparation of semiconducting single-walled carbon nanotubes, can solve the problems of wide diameter distribution, easy agglomeration, wide diameter distribution of carbon nanotubes, etc.
CN107089652BActive Publication Date: 2019-05-10INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
Publication Date
2019-05-10

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Abstract

The present invention relates to the field of controllable preparation of semiconducting single-walled carbon nanotubes, specifically a method for preparing narrow band gap distribution and high-purity semiconducting single-walled carbon nanotubes by partially carbon-coating a metal catalyst. A block copolymer self-assembly method is used to prepare uniformly sized copolymer films coated with metal anion nanoclusters; by controlling solvent annealing, oxidation, and reduction conditions, monodispersed, partially carbon-coated metal catalyst nanoparticles are obtained; and then Hydrogen is an in-situ etching gas that directly grows narrow band gap distribution and high-purity semiconducting single-walled carbon nanotubes. The content of semiconducting single-walled carbon nanotubes is greater than 98%, and the band gap difference is at least 0.05eV and is adjustable. The invention realizes the direct controllable growth of narrow band gap distribution and high-purity semiconducting single-walled carbon nanotubes, breaks through the bottleneck of the current controlled preparation of high-purity, narrow band gap distribution semiconducting single-walled carbon nanotubes, and confirms that it is an ideal method for constructing thin film field effects. Ideal channel material for transistors.
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Description

technical field

[0001] The invention relates to the field of controllable preparation of semiconducting single-walled carbon nanotubes, specifically a method for preparing semiconducting single-walled carbon nanotubes with narrow bandgap distribution and high purity by partially carbon-coated metal catalysts. Assembly process and post-treatment conditions to prepare monodisperse, narrow particle size distribution, partially carbon-coated metal catalyst nanoparticles; then use hydrogen as a carrier gas and etching gas to remove highly active metallic single-walled carbon nanotubes in situ , to directly realize the controlled growth of semiconducting single-walled carbon nanotubes with narrow bandgap distribution and tunable bandgap. Background technique

[0002] Single-walled carbon nanotubes can be regarded as one-dimensional hollow tubular structures rolled from single-layer graphene, which have metallic or semiconducting properties related to diameter and helix angle. Sem...

Claims

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