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Preparation method of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

A single-walled carbon nanotube, semiconducting technology, applied in the field of controllable preparation of semiconducting single-walled carbon nanotubes, can solve the problems of wide diameter distribution, easy agglomeration, wide diameter distribution of carbon nanotubes, etc.

Active Publication Date: 2019-05-10
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to provide a method for preparing narrow bandgap distribution and high-purity semiconducting single-walled carbon nanotubes by partially carbon-coating metal catalysts, which overcomes the problem of uncertain nucleation modes of existing single-walled carbon nanotubes on metal catalysts. The problem of wide diameter distribution of carbon nanotubes, while overcoming the problem of wide diameter distribution caused by the easy agglomeration of existing metallic catalysts at high temperatures, through the size control and structural design of the catalyst, combined with hydrogen in-situ etching, directly grow narrow band gap distribution, high Pure, high-quality semiconducting single-walled carbon nanotubes

Method used

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  • Preparation method of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes
  • Preparation method of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes
  • Preparation method of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

Examples

Experimental program
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Effect test

Embodiment 1

[0045] Example 1. Preparation of partially carbon-coated cobalt nanoparticles and its catalytic growth of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

[0046] The specific preparation and growth process are as follows: figure 1 shown.

[0047] (1) Preparation of partially carbon-coated Co metal nanoparticles

[0048] The toluene and tetrahydrofuran solution (mass ratio of toluene and tetrahydrofuran 2:1) containing 0.3wt% block copolymer was spin-coated on the surface of the silicon wafer after hydrophilic treatment with 4000rpm, and then placed in toluene and tetrahydrofuran solution (volume ratio 1 :3) Solvent annealing in the vapor of 20 hours, then this silicon chip is placed in 1mM K 3 [Co(CN) 6 ] solution for 3 minutes to adsorb [Co(CN) 6 ] 3- The anions were taken out and washed with deionized water, dried at 60°C for 30 minutes, and finally placed in air plsama (power 20W) for 20 minutes. Place the silicon wafers treated...

Embodiment 2

[0053] Example 2. Preparation of partially carbon-coated iron nanoparticles and its catalytic growth of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

[0054] (1) Preparation of partially carbon-coated iron metal nanoparticles

[0055] Catalyst preparation step is consistent with embodiment 1, difference is that catalyst precursor is 1mM K 3 [Fe(CN) 6 ] solution. Atomic force microscopy characterization showed that the nanoparticles were uniformly dispersed on the surface of the silicon substrate. The transmission electron microscope observation shows that the surface of all the nanoparticles is partially covered by the carbon layer, and the particle size is uniform. The diameters of 125 particles randomly counted are distributed in the range of 2.5 to 4.0 nm.

[0056] (2) Growth and characterization of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

[0057] The growth and characterization of...

Embodiment 3

[0060] Example 3. Preparation of partially carbon-coated iron-tungsten nanoparticles and its catalytic growth of narrow bandgap distribution, high-purity semiconducting single-walled carbon nanotubes

[0061] (1) Preparation of partially carbon-coated iron-tungsten metal nanoparticles

[0062] Catalyst preparation step is consistent with embodiment 1, and difference is that catalyst precursor is 0.5mM K 3 [Fe(CN) 6 ] and 0.5mM (NH 4 ) 10 W 12 o 41 mixed solution. Atomic force microscopy characterization showed that the nanoparticles were uniformly dispersed on the surface of the silicon substrate. The transmission electron microscope observation shows that the surface of all the nanoparticles is partially covered by the carbon layer, and the particle size is uniform. The diameters of 135 particles randomly counted are distributed in the range of 3.0-4.5nm.

[0063] (2) Growth and characterization of narrow bandgap distribution, high-purity semiconducting single-walled ...

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Abstract

The present invention relates to the field of controllable preparation of semiconducting single-walled carbon nanotubes, specifically a method for preparing narrow band gap distribution and high-purity semiconducting single-walled carbon nanotubes by partially carbon-coating a metal catalyst. A block copolymer self-assembly method is used to prepare uniformly sized copolymer films coated with metal anion nanoclusters; by controlling solvent annealing, oxidation, and reduction conditions, monodispersed, partially carbon-coated metal catalyst nanoparticles are obtained; and then Hydrogen is an in-situ etching gas that directly grows narrow band gap distribution and high-purity semiconducting single-walled carbon nanotubes. The content of semiconducting single-walled carbon nanotubes is greater than 98%, and the band gap difference is at least 0.05eV and is adjustable. The invention realizes the direct controllable growth of narrow band gap distribution and high-purity semiconducting single-walled carbon nanotubes, breaks through the bottleneck of the current controlled preparation of high-purity, narrow band gap distribution semiconducting single-walled carbon nanotubes, and confirms that it is an ideal method for constructing thin film field effects. Ideal channel material for transistors.

Description

technical field [0001] The invention relates to the field of controllable preparation of semiconducting single-walled carbon nanotubes, specifically a method for preparing semiconducting single-walled carbon nanotubes with narrow bandgap distribution and high purity by partially carbon-coated metal catalysts. Assembly process and post-treatment conditions to prepare monodisperse, narrow particle size distribution, partially carbon-coated metal catalyst nanoparticles; then use hydrogen as a carrier gas and etching gas to remove highly active metallic single-walled carbon nanotubes in situ , to directly realize the controlled growth of semiconducting single-walled carbon nanotubes with narrow bandgap distribution and tunable bandgap. Background technique [0002] Single-walled carbon nanotubes can be regarded as one-dimensional hollow tubular structures rolled from single-layer graphene, which have metallic or semiconducting properties related to diameter and helix angle. Sem...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/162C01B32/159B01J23/75B01J23/745B01J23/888B01J23/89
CPCB01J23/745B01J23/75B01J23/888B01J23/8993C01P2004/04C01P2002/82B01J35/40
Inventor 刘畅张峰侯鹏翔成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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