A preparation method of narrow diameter distribution, high-purity metallic single-walled carbon nanotubes

Abstract

The invention relates to the field of controllable preparation of metallic single-wall carbon nanotubes, in particular to a method for preparing metallic single-wall carbon nanotubes with narrow diameter distribution and high purity. Catalyst nanoparticles with uniform size can be controlled and prepared by block copolymer self-assembly method, and bimetallic solid solution nanoparticles with uniform size, monodisperse, close-packed hexagonal structure, and high melting point can be obtained by designing the composition of the catalyst and adjusting its oxidation and reduction conditions. Particles; and then realize the quasi-static chemical vapor deposition process by controlling the kinetic reaction conditions of low temperature, low carbon source, low hydrogen and low carrier gas flow rate, and directly grow metallic single-walled carbon with a diameter of 1.1±0.3nm and a purity of 80wt%. nanotube. The present invention realizes direct and controllable growth of narrow diameter distribution and high-purity metallic single-walled carbon nanotubes through catalyst design combined with growth thermodynamics and kinetics control, improves the structure control precision of metallic single-walled carbon nanotubes, and promotes The application of metallic single-walled carbon nanotubes lays the foundation for materials.

Description

technical field [0001] The invention relates to the field of controllable preparation of metallic single-walled carbon nanotubes, in particular to a preparation method of narrow diameter distribution and high-purity metallic single-walled carbon nanotubes. Background technique [0002] Single-walled carbon nanotubes with different chiral angles and diameters can exhibit metallic and semiconducting properties. Metallic single-walled carbon nanotubes have ultra-high electrical transport properties due to quantum transport effects, and are excellent electrode materials for future nanoelectronic devices, while semiconducting single-walled carbon nanotubes have high carrier mobility and One-dimensional structures are ideal materials for constructing field effect transistor channels. Therefore, obtaining high-purity single-walled carbon nanotubes (metallic or semiconducting) with single conductive properties is a necessary prerequisite for their application in the above-mentioned...

AI Technical Summary

Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing narrow-diameter distribution, high-purity metallic single-walled carbon nanotubes. By designing the size, composition and structure of the catalyst, it can overcome the instability and easy agglomeration of general metal nanoparticles that lead to the growth of carbon nanotubes. The problem of wide tube diameter distribution; select quasi-static chemical vapor deposition conditions of low temperature, low carbon source, low hydrogen, and low flow rate to directly grow narrow diameter distribution, high purity, and high quality metallic single-walled carbon nanotubes

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