The invention relates to massive and controllable preparation field of
semiconductor type single-walled carbon nanotubes, specifically to a method for directly growing the
semiconductor type single-walled
carbon nanotube with floating catalyst and auxiliary
oxygen. The method comprises the following steps of: taking
ferrocene as precursor of the catalyst, taking right amount of sulphur
powder as growth
promoter, and taking
hydrogen as a carrier gas; simultaneously introducing a
carbon source gas and small amount of
oxygen to grow the single-walled
carbon nanotube, and
etching the small-
diameter and metallic single-walled
carbon nanotube in situ; and finally, obtaining a sample in which the
semiconductor type single-walled carbon
nanotube is dominant, wherein content of the semiconductor type single-walled carbon
nanotube is 90 wt%, and
diameter distribution of the semiconductor type single-walled carbon
nanotube is 1.4-1.8 nm. With the method, massive and directly controlled growth ofthe semiconductor type single-walled carbon nanotube with narrower
diameter distribution is realized; and the method solves the problems, such as that the
separation process of the existing chemical and physical methods seriously damages the intrinsic structure of the single-walled carbon nanotube and the process is complex, and sample amount is less, diameter distribution is wider and the diameter is smaller in the direct preparation technology, and the like.