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Catalyst for zinc oxide nanowire growth, and application of catalyst

A technology of zinc oxide nanowires and catalysts, applied in zinc oxide/zinc hydroxide, physical/chemical process catalysts, catalyst activation/preparation, etc., can solve the problems of limiting the application of nanowire materials and the high temperature of zinc oxide nanowire growth

Inactive Publication Date: 2014-01-22
UNIV OF SHANGHAI FOR SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The eutectic point of gold-zinc is above 400°C, so the growth temperature of zinc oxide nanowires is usually relatively high, which greatly limits the practical application of nanowire materials

Method used

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  • Catalyst for zinc oxide nanowire growth, and application of catalyst
  • Catalyst for zinc oxide nanowire growth, and application of catalyst
  • Catalyst for zinc oxide nanowire growth, and application of catalyst

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] A catalyst used for the growth of zinc oxide nanowires is an Au / Ga double-layer film formed by the mass ratio of metal Au and metal Ga, that is, Au: Ga is 1.5:1;

[0045] The preparation method of the catalyst Au / Ga bilayer film used for the growth of the above-mentioned a kind of zinc oxide nanowire is as follows:

[0046] Using a-plane Al 2 o 3 As the substrate material, a 1nm gallium layer is plated on the substrate by electron beam evaporation with an evaporation rate of 0.01A / s, and then a 1.5nm gold layer is plated on the substrate by an electron beam evaporation method with an evaporation rate of 0.01A / s s.

[0047] a-surface Al treated by electron evaporation as described above 2 o 3 As the substrate material, ZnO nanowires are grown by chemical vapor deposition, the specific process is as follows:

[0048] (1) Fully grind zinc oxide nanopowder with equal mass ratio and graphite powder passing through a 300 mesh sieve, and put them into a quartz boat;

[0...

Embodiment 2

[0057] First, the a-plane Al 2 o 3 A 1.5nm-thick Au film was plated on the substrate, and then local Ga ions were implanted by focused ion beam etching (FIB). The ion beam etching conditions were: accelerating voltage 30kV, beam current 0.19nA, etching The time is 70ms, and the size of the etching area is a circle with a diameter of 20um. Electron energy dispersive spectroscopy (EDS) of Ga+ implanted Au thin films in the region after focused ion beam etching as image 3 shown, from image 3 It can be seen that the peak of Ga appeared in the EDS spectrum, indicating that Ga was successfully implanted into the Au film.

[0058] a-side Al treated with FIB 2 o 3 As the substrate material, ZnO nanowires are grown by chemical vapor deposition, and the specific growth process is as follows:

[0059] (1) Fully grind zinc oxide nanopowder with equal mass ratio and graphite powder passed through a 300-mesh sieve, and put them into a quartz boat;

[0060] (2), the a-face Al ...

Embodiment 3

[0067] c-plane Al 2 o 3 As the substrate, 1.5nm Au film as the catalyst, the catalyst film is locally treated with FIB technology for local Ga ion implantation, the ion beam etching conditions are acceleration voltage 30kV, beam current size 0.19nA, etching time 70ms, etching area The size is a circle with a diameter of 20um.

[0068] c-plane Al treated with FIB 2 o 3 As the substrate material, ZnO nanowires are grown by chemical vapor deposition, and the specific growth process is as follows:

[0069] (1) Fully grind zinc oxide nanopowder with equal mass ratio and graphite powder passing through a 300 mesh sieve, and put them into a quartz boat;

[0070] (2) The c-plane Al coated with the catalyst Au / Ga alloy film used for the growth of zinc oxide nanowires obtained by ion implantation 2 o 3 The substrate is placed on the powder in the quartz boat;

[0071] (3) Put the quartz boat into the quartz glass tube, then put the quartz glass tube into the tube furnace, and ali...

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Abstract

The invention discloses a catalyst for a zinc oxide nanowire and application of the catalyst in growth of the zinc oxide nanowire. The catalyst for the zinc oxide nanowire is an Au / M multilayer film or an Au-M alloy film formed by metal Au and metal M with a mass ratio of 0.2 to 5:1, wherein M is a metal, the eutectic point of which and Zn is below 500 DEG C, preferably, M is a metal, the eutectic point of which and Zn is below 300 DEG C. Compared with gold as a catalyst under similar conditions, the catalyst is used for the growth of the zinc oxide nanowire, and the higher growth rate of the zinc oxide nanowire can be obviously obtained, the density of arrays of the prepared zinc oxide nanowire is larger, the diameter and the length of the nanowire are more uniform, and the grown zinc oxide nanowire has higher crystalline quality.

Description

technical field [0001] The invention relates to the field of preparation of nanometer materials, in particular to a catalyst used for the growth of zinc oxide nanowire vertical arrays and its application. Background technique [0002] One-dimensional oxidic nanowires have large aspect ratios, large exciton binding energies, and large band gaps at room temperature. Therefore, it has excellent photoelectric properties and has broad application prospects in nano-lasers, field emission electron sources, solar cells and gas-sensing devices. The controllable synthesis of ZnO nanowires is the basis for its device applications. [0003] Chemical vapor deposition is one of the most commonly used methods for preparing ZnO nanowires. Compared with other methods, the ZnO nanowires grown by this method have the best crystal quality and orientation. However, the chemical vapor deposition method usually requires a very high synthesis temperature (>500°C). At the same time, the prepar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/66B01J35/02B01J37/34C01G9/03B82Y40/00C23C14/08C23C14/35C23C14/30
Inventor 王现英谢澍梵郑学军
Owner UNIV OF SHANGHAI FOR SCI & TECH
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