Preparation method of metallic single-walled carbon nanotube with narrow diameter distribution and high purity

Abstract

The invention relates to the field of controllable preparation of metallic single-walled carbon nanotubes, in particular to a preparation method of a metallic single-walled carbon nanotube with narrowdiameter distribution and high purity. According to the invention, catalyst nanoparticles with uniform sizes are controllably prepared by using a block copolymer self-assembly method, and bimetal solid solution nanoparticles with uniform sizes, monodispersity, a densely arranged hexagonal structure and a high melting point are obtained by designing the components of a catalyst and regulating oxidation and reduction conditions of the catalyst; a quasi-static chemical vapor deposition process is realized by controlling dynamic reaction conditions including low temperature, low carbon source, low hydrogen and low carrier gas flow rate, and the metallic single-walled carbon nanotube with a diameter of 1.1 + / - 0.3 nm and a purity of 80 wt% is directly grown. According to the invention, throughcombination of catalyst design and thermodynamics and dynamics control of growth, direct controllable growth of the metallic single-walled carbon nanotube with narrow diameter distribution and high purity is realized, the structural control precision of the metallic single-walled carbon nanotube is improved, and a material foundation is laid for promoting application of the metallic single-walledcarbon nanotube.

Description

technical field [0001] The invention relates to the field of controllable preparation of metallic single-wall carbon nanotubes, in particular to a method for preparing metallic single-wall carbon nanotubes with narrow diameter distribution and high purity. Background technique [0002] Single-walled carbon nanotubes with different chiral angles and diameters can exhibit metallic and semiconducting properties. Metallic single-walled carbon nanotubes have ultra-high electrical transport properties due to quantum transport effects, and are excellent electrode materials in future nanoelectronic devices, while semiconducting single-walled carbon nanotubes have high carrier mobility and The one-dimensional structure is an ideal material for constructing the channel of field effect transistors. Therefore, obtaining high-purity single-walled carbon nanotubes (metallic or semiconductive) with a single conductive property is a necessary prerequisite for their application in the above...

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Problems solved by technology

[0006] The purpose of the present invention is to provide a method for preparing narrow-diameter distribution, high-purity metallic single-walled carbon nanotubes. By designing the size, composition and structure of the catalyst, it can overcome the instability and easy agglomeration of general metal nanoparticles that lead to the growth of carbon nanotubes. The problem of wide tube diameter distribution; select quasi-static chemical vapor deposition conditions of low temperature, low carbon source, low hydrogen, and low flow rate to directly grow narrow diameter distribution, high purity, and high quality metallic single-walled carbon nanotubes

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