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A crystallization method of polysilicon, crystallization equipment and polysilicon

A polysilicon and crystallization technology, applied in the field of liquid crystal display panel backplane preparation, can solve the problems of complex laser energy control system, high equipment requirements, influence, etc., to achieve continuous and convenient energy adjustment, and improve the effect of crystal quality.

Active Publication Date: 2019-02-15
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The existing ELA equipment realizes the control of p-Si with different crystallization effects by changing the energy of the laser. This method can certainly meet the requirements of the existing conditions for the performance of p-Si, but this method does not affect the performance of the equipment. Higher requirements and more complex laser energy control system, so the cost is higher
In addition, in this method, since the heating of a-Si (amorphous silicon) by ELA equipment is carried out in vacuum, the uncontrollable cooling rate will affect the crystallization state of a-Si after heating, so that the final obtained p- The uniformity of the Si surface is poor, which will affect the characteristics of the final TFT (ThinFilm Transistor, thin film transistor)

Method used

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  • A crystallization method of polysilicon, crystallization equipment and polysilicon
  • A crystallization method of polysilicon, crystallization equipment and polysilicon
  • A crystallization method of polysilicon, crystallization equipment and polysilicon

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Embodiment 1

[0020] Such as figure 1 As shown, the embodiment of the present invention provides a polysilicon crystallization method, comprising:

[0021] S110, placing the substrate on which the amorphous silicon layer is deposited in a liquid;

[0022] S120, using an excimer laser annealing ELA device to irradiate the amorphous silicon layer in the liquid with laser light to crystallize the amorphous silicon;

[0023] The method can also include the following features:

[0024] In one embodiment, the liquid is water. Water does not react with silicon during the crystallization process, and it is not easy to corrode the crystallization chamber.

[0025] In other embodiments, the liquid may also be other liquids besides water, such as saline solution and the like.

[0026] In one embodiment, before placing the substrate deposited with the amorphous silicon layer in the liquid, the method further comprises:

[0027] Determine the distance between the amorphous silicon layer and the liq...

Embodiment 2

[0038] An embodiment of the present invention provides polysilicon, which is prepared by using the above polysilicon crystallization method.

Embodiment 3

[0040] Such as diagram 2-1 As shown, the embodiment of the present invention provides a polysilicon crystallization equipment, including:

[0041] Crystallization tank 201, for loading liquid;

[0042] The substrate fixing device 202 is arranged in the crystallization pool, and is used to support the substrate deposited with the amorphous silicon layer;

[0043] The excimer laser annealing ELA device 203 is used to irradiate the amorphous silicon layer in the liquid with laser to crystallize the amorphous silicon.

[0044] In one embodiment, the liquid is water.

[0045] In other embodiments, the liquid may also be other liquids besides water, such as saline solution and the like.

[0046] In one embodiment, as diagram 2-1 As shown, the substrate fixing device 202 may be a carrier table;

[0047] In one embodiment, as diagram 2-1 As shown, the excimer laser annealing ELA device 203 can move above the crystallization pool, so that the laser beam can be irradiated every...

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Abstract

The invention discloses a crystallization method and crystallization equipment of polycrystalline silicon, and the polycrystalline silicon. The crystallization method of the polycrystalline silicon comprises the following steps: putting a substrate, on which an amorphous silicon layer is deposited, into liquid; and performing laser irradiation on the amorphous silicon layer in the liquid by an excimer laser annealing (ELA) device to crystallize the amorphous silicon. According to the technical scheme of the invention, the crystallization quality of the polycrystalline silicon can be improved, so that energy regulation in the crystallization process is continuous and convenient.

Description

technical field [0001] The invention relates to the field of liquid crystal display panel backplane preparation, in particular to a polysilicon crystallization method, crystallization equipment and polysilicon. Background technique [0002] For mobile products, OLED (Organic Light-Emitting Diode, organic electroluminescent diode) devices are receiving more and more attention due to their high contrast ratio, excellent display effect and being applicable to flexible displays. The backplane of the OLED display panel generally needs LTPS (Low Temperature Poly-silicon, low temperature polysilicon technology) to drive. As one of the core technologies of LTPS, the effect of ELA (Excimer Laser Annealing, excimer laser annealing) equipment directly affects The final ion mobility affects the final display effect, so how to obtain p-Si (Poly-Si, polysilicon) with better crystallization effect through a simple method will be decisive for the realization of the excellent performance of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B30/00C30B28/02C30B29/06
CPCC30B28/02C30B29/06C30B30/00
Inventor 班圣光
Owner BOE TECH GRP CO LTD