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Method for growing ultrathin stannous sulfide nanosheet through sulfur passivation

A technology of stannous sulfide and nanosheets, applied in chemical instruments and methods, nanotechnology for materials and surface science, nanotechnology, etc., can solve problems such as difficult growth of stannous sulfide ultrathin nanosheets, and achieve the preparation process The effect of simplicity and broad application prospects

Pending Publication Date: 2022-05-13
FUJIAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to overcome the horizontal and vertical synchronous growth encountered when the current vapor deposition method grows stannous sulfide nanosheets, and it is difficult to grow ultrathin stannous sulfide nanosheets with small vertical dimensions and large lateral dimensions, and provides a method for using Method for growing ultra-thin tin sulfide nanosheets by sulfur passivation

Method used

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  • Method for growing ultrathin stannous sulfide nanosheet through sulfur passivation
  • Method for growing ultrathin stannous sulfide nanosheet through sulfur passivation
  • Method for growing ultrathin stannous sulfide nanosheet through sulfur passivation

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Embodiment 1

[0026] A method utilizing sulfur passivation to grow ultra-thin tin sulfide nanosheets, comprising the following steps:

[0027] 1) The ultra-thin mica sheet is peeled off by mechanical peeling method to obtain a clean surface. The size of the mica sheet is about 5×1cm;

[0028] With mica as the growth substrate of stannous sulfide nanosheets, 30mg of stannous sulfide powder is placed in the heating center of the quartz tube of the single temperature zone tube furnace, and 300mg of sulfur powder is placed in the low temperature zone upstream of the quartz tube of the tube furnace away from the heating center , the mica is placed in the low temperature area downstream of the quartz tube of the tube furnace away from the heating center;

[0029] 2) Use a mechanical pump to pump the quartz tube of the tube furnace to a low-pressure environment, use argon gas with a flow rate of 50sccm to wash the gas, and discharge the excess impurity gas in the quartz tube of the tube furnace. ...

Embodiment 2

[0032] A method utilizing sulfur passivation to grow ultra-thin tin sulfide nanosheets, comprising the following steps:

[0033] 1) The ultra-thin mica sheet is peeled off by mechanical peeling method to obtain a clean surface. The size of the mica sheet is about 5×1cm;

[0034] With mica as the growth substrate of stannous sulfide nanosheets, 10mg of stannous sulfide powder is placed in the heating center of the quartz tube of the single temperature zone tube furnace, and 100mg of sulfur powder is placed in the low temperature zone upstream of the quartz tube of the tube furnace away from the heating center , the mica is placed in the low temperature area downstream of the quartz tube of the tube furnace away from the heating center;

[0035] 2) Use a mechanical pump to pump the quartz tube of the tube furnace to a low-pressure environment, use helium with a flow rate of 30sccm to wash the gas, and discharge the excess impurity gas in the quartz tube of the tube furnace. Pum...

Embodiment 3

[0038] A method utilizing sulfur passivation to grow ultra-thin tin sulfide nanosheets, comprising the following steps:

[0039] 1) The ultra-thin mica sheet is peeled off by mechanical peeling method to obtain a clean surface. The size of the mica sheet is about 5×1cm;

[0040] Using mica as the growth substrate of stannous sulfide nanosheets, place 40mg of stannous sulfide powder in the heating center of the quartz tube of the single-temperature zone tube furnace, and place 500mg of sulfur powder in the upstream low temperature zone of the quartz tube of the tube furnace away from the heating center , the mica is placed in the low temperature area downstream of the quartz tube of the tube furnace away from the heating center;

[0041] 2) Use a mechanical pump to pump the quartz tube of the tube furnace to a low-pressure environment, use neon gas with a flow rate of 60sccm to wash the gas, and discharge the excess impurity gas in the quartz tube of the tube furnace. Pump to ...

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Abstract

The invention discloses a method for growing ultrathin stannous sulfide nanosheets through sulfur passivation, and belongs to the field of two-dimensional nanomaterials. The method specifically comprises the step of growing the ultrathin stannous sulfide nanosheet by using a vapor deposition method and taking stannous sulfide powder as a growth source, powdered sulfur as a passivator, inert gas as carrier gas and a mica sheet as a substrate. In the stannous sulfide growth process, sulfur powder is used for creating a sulfur-rich atmosphere, so that excessive sulfur atoms are adsorbed on the upper surfaces of the stannous sulfide nanosheets, a layer of SnS2 is generated on the upper surfaces of the stannous sulfide nanosheets, vertical connection between SnS layers is blocked, longitudinal growth of the stannous sulfide nanosheets is inhibited, and the stannous sulfide nanosheets with the thickness of two layers can grow. The preparation process is simple, industrial production can be achieved, a very important guiding thought is provided for growth of ultrathin stannous sulfide nanosheets, and good application and popularization value is achieved.

Description

technical field [0001] The invention belongs to the field of two-dimensional semiconductor materials and their manufacture, and in particular relates to a method for growing ultra-thin tin sulfide nanosheets by using sulfur passivation. Background technique [0002] Tin sulfide (SnS) is a layered two-dimensional (2D) IV main group monosulfide compound, similar to black phosphorus; it has low symmetry crystal structure and intrinsic anisotropy characteristics, high absorption coefficient (>10 4 cm -1 ), with a direct bandgap of 1.32 eV and an indirect bandgap of 1.1 eV, with piezoelectric effect and ferroelectricity, it is an intrinsic p-type semiconductor material that has attracted more and more attention. There are many preparation methods of SnS at present, such as mechanical exfoliation method, epitaxial growth method, atomic layer deposition method, vapor phase deposition method and so on. However, achieving the controllable growth of ultrathin Sn2S still faces gre...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G19/00B82Y30/00B82Y40/00
CPCC01G19/00B82Y30/00B82Y40/00C01P2002/85C01P2004/04C01P2002/82C01P2004/61
Inventor 高帅刘金养高岩汪鑫峰
Owner FUJIAN NORMAL UNIV