A kind of novel cemented carbide grain growth inhibitor and preparation method thereof
A technology of cemented carbide and grain growth, which is applied in nanotechnology and other directions, can solve the problems of uneven mixing of inhibitors and cemented carbide materials, and achieve the effects of low preparation cost, high-performance preparation, and improved inhibition effect
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Embodiment 1
[0018] Embodiment 1 nanometer (V, Cr) (C, N) grain inhibitor grain growth inhibitor
[0019] It includes: firstly, ammonium metavanadate, ammonium chromate and nano-carbon black are respectively used as V source, Cr source and C source (weight ratio 5:13:60), and the precursor product is prepared by aqueous solution spray granulation. at 1100°C, N 2 In a closed system with a pressure of 0.03MPa, keep warm for 60min, carbothermally reduce and nitride the precursor product, and synthesize a single nanocrystal (V 0.35 ,Cr 0.65 ,) 3 (C,N) Solid solution powder.
Embodiment 2
[0021] Take WC powder, Co powder and nanometer (V 0.35 ,Cr 0.65 ,) 3 (C,N)) Grain inhibitors were mixed into initial materials, and ball milled for 72 hours in an ethanol environment at a speed of 50 rpm and a ball-to-material weight ratio (BPR) of 10:1, and fully ground into a total mixture. The blend was dried, sieved, and cold compacted under a unidirectional load of 150 MPa. Vacuum sintering is carried out on the compact, and isothermally sintered at 1763K for 1 hour, during which the pressure is gradually increased, and the argon pressure is 2 MPa during the holding time in the later stage of sintering, and WC cemented carbide is obtained.
Embodiment 3
[0023] Take WC powder, Co powder and nanometer (V 0.35 ,Cr 0.65 ,) 3 (C,N)) Grain inhibitors were mixed into initial materials, and ball milled for 72 hours in an ethanol environment at a speed of 50 rpm and a ball-to-material weight ratio (BPR) of 10:1, and fully ground into a total mixture. The blend was dried, sieved, and cold compacted under a unidirectional load of 150 MPa. Vacuum sintering is carried out on the compact, and isothermally sintered at 1763K for 1 hour, during which the pressure is gradually increased, and the argon pressure is 2 MPa during the holding time in the later stage of sintering, and WC cemented carbide is obtained.
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