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Image sensor and manufacturing method thereof

An image sensor and optical channel technology, applied in the field of image sensors, can solve the problems of affecting the service life of image sensors, affecting the sensitivity of image sensors, and warping of alternate isolation layers in edge regions, so as to reduce deposition rate and polishing rate, improve sensitivity, good uniformity

Active Publication Date: 2017-09-22
SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the process of depositing alternating isolation layers on the semiconductor substrate, because the deposition rate and planarization rate of the edge area and the central area are different, the uniformity of the isolation layer in the edge area and the middle area is inconsistent, which ultimately affects the sensitivity of the image sensor; at the same time, because the alternating isolation layer The stress of different isolation layers in the sensor is different. If only the optical channel is etched above the photodiode, it will cause warping and peeling of the alternate isolation layers in the edge area, which will eventually affect the service life of the image sensor.

Method used

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  • Image sensor and manufacturing method thereof
  • Image sensor and manufacturing method thereof

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Embodiment 1

[0027] A specific manufacturing process of an image sensor is as follows:

[0028] See figure 1 A silicon substrate with a resistivity of 80-100Ω·m in the N(100) direction is used as the semiconductor substrate 1, and it is cleaned by RCA with a cleaning solution containing SC1, HF, and SC2. A 10nm thermal oxide layer is formed on the semiconductor substrate 1, a 35nm polysilicon layer and a 15nm SiN layer are sequentially deposited on the thermal oxide layer by chemical vapor deposition, and a 50nm deep groove is etched through a photoresist mask. Remove the photoresist and form 25nm SiO in the above trench 2 oxide layer, formed in the SiO 2 Ion implantation is performed on the oxide layer to form an N-channel stop layer, and 500nm SiO is formed in the N-channel stop layer by chemical vapor deposition. 2 layer, and annealed in nitrogen at a temperature of 950°C for 60 minutes, and then planarized to form shallow trench isolation.

[0029] The photoresist is used as a mas...

Embodiment 2

[0041] A specific manufacturing process of an image sensor is as follows:

[0042] See Figure 8 A silicon substrate with a resistivity of 80-100Ω·m in the N(100) direction is used as the semiconductor substrate 1, and it is cleaned by RCA with a cleaning solution containing SC1, HF, and SC2. A 10nm thermal oxide layer is formed on the semiconductor substrate 1, a 35nm polysilicon layer and a 15nm SiN layer are sequentially deposited on the thermal oxide layer by chemical vapor deposition, and a 50nm deep groove is etched through a photoresist mask. Remove the photoresist and form 25nm SiO in the above trench 2 oxide layer, formed in the SiO 2 Ion implantation is performed on the oxide layer to form an N-channel stop layer, and 500nm SiO is formed in the N-channel stop layer by chemical vapor deposition. 2 layer, and annealed in nitrogen at a temperature of 950°C for 60 minutes, and then planarized to form shallow trench isolation.

[0043] The photoresist is used as a mas...

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Abstract

The invention discloses an image sensor, which comprises a function region and an edge region. The function region comprises an integrated substrate unit and an alternative isolation layer I. The function region also comprises an optical channel groove I and an optical channel, wherein the optical channel is filled in the optical channel groove I. The edge region comprises an alternative isolation layer II. The edge region also comprises an optical channel groove II and a non-functional optical channel, wherein the non-functional optical channel is filled in the optical channel groove II. According to the image sensor, in the process of etching the optical channel groove in the function region, the optical channel groove is also etched in the edge region, such that the edge alternative isolation layer can be prevented from warping and peeling, and meanwhile, deposition polishing rate of the edge region can be reduced, and uniformity of the alternative isolation layer is allowed to be better.

Description

technical field [0001] The invention relates to the field of image sensors, in particular to an image sensor and a manufacturing method thereof. Background technique [0002] Image sensors include Charge Coupled Devices (CCD) and Complementary Metal Oxide Semiconductors (CMOS). The manufacturing process of CCD is complicated and the cost is high. CMOS is too prone to noise and the process is complicated. The currently commonly used backside illuminated (BSI) type CMOS uses wafer bonding technology to change the internal structure of the element, that is, to turn the direction of the element in the photosensitive layer so that light can enter directly from the back, avoiding the light in the traditional CMOS sensor structure. Affected by the circuit and transistor between the microlens and the photodiode, the light efficiency is significantly improved, and the shooting effect in low light conditions is greatly improved. [0003] However, in the CMOS technology of the backsid...

Claims

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Application Information

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IPC IPC(8): H01L27/146
CPCH01L27/14603H01L27/14643H01L27/14689
Inventor 龟井诚司
Owner SHANGHAI INTEGRATED CIRCUIT RES & DEV CENT