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Method for preparing microelectronic interconnection material through two-step sintering for nano-silver paste

A technology of nano-silver paste and interconnection materials, which is applied in low-temperature connection technology, low-temperature sintering of nano-silver paste, and lead-free preparation of microelectronic interconnection materials. It can solve the problem of uneven heating of nano-silver paste and achieve improved heating Inhomogeneity, large application value, the effect of electrical conductivity and improved mechanical properties

Inactive Publication Date: 2017-10-17
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] In order to solve the problems of the prior art, the purpose of the present invention is to overcome the deficiencies in the prior art, and provide a method for preparing microelectronic interconnection materials by two-step sintering of nano-silver paste, which can improve the strength of the microelectronic interconnection materials prepared after sintering. Mechanical strength, to a certain extent reduce the porosity of nano-silver paste after sintering, improve the thermal conductivity of microelectronic interconnection materials, and ensure that sufficient oxygen is needed to decompose the organic components in nano-silver paste during the sintering process of nano-silver paste, so that The sintering is more thorough, and the disadvantage of uneven heating of the nano-silver paste in the single sintering process is improved, thereby improving the quality of the sintered microelectronic interconnection material of the nano-silver paste, which has important industrial value

Method used

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  • Method for preparing microelectronic interconnection material through two-step sintering for nano-silver paste
  • Method for preparing microelectronic interconnection material through two-step sintering for nano-silver paste
  • Method for preparing microelectronic interconnection material through two-step sintering for nano-silver paste

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Embodiment 1

[0025] In this example, see Figure 1~5 A method for preparing microelectronic interconnection materials by sintering nano-silver paste in two steps, comprising the steps of:

[0026] a. adopt ethanol as organic solvent, adopt molecular formula to be C 10 h 18 O and terpineol with a boiling point of 214-224°C as a diluent, anhydrous sodium citrate with a purity of 98% as a dispersant, polyvinyl butyral as an organic carrier, measure 50ml of ethanol, and heat to 60°C, then use a balance to weigh 0.045g of sodium citrate, 0.5g of polyvinyl butyral, and 0.355g of terpineol, and then slowly add sodium citrate, polyvinyl butyral and terpineol to ethanol in sequence solution, and mechanically stirred for 10min, until the ethanol solution was cooled to room temperature, adding 4.1g of nano-Ag powder with a purity of 99.9% and an average silver particle size of 20nm, then mechanically stirred for 20min, the nano-silver mixed liquid was housed Put the beaker of the system into the u...

Embodiment 2

[0033] This embodiment is basically the same as Embodiment 1, especially in that:

[0034] In this embodiment, a method for preparing microelectronic interconnection materials by sintering nano-silver paste in two steps comprises the following steps:

[0035] a. adopt ethanol as organic solvent, adopt molecular formula to be C 10 h 18 O and terpineol with a boiling point of 214-224°C as a diluent, anhydrous sodium citrate with a purity of 98% as a dispersant, polyvinyl butyral as an organic carrier, measure 50ml of ethanol, and heat to 60°C, then use a balance to weigh 0.045g of sodium citrate, 0.5g of polyvinyl butyral, and 0.355g of terpineol, and then slowly add sodium citrate, polyvinyl butyral and terpineol to ethanol in sequence solution, and mechanically stirred for 5min, until the ethanol solution was cooled to room temperature, adding 4.1g of nano-Ag powder with a purity of 99.9% and an average silver particle size of 30nm, then mechanically stirred for 10min, the n...

Embodiment 3

[0042] This embodiment is basically the same as the previous embodiment, and the special features are:

[0043] In the step e, after the first low-temperature sintering is completed in the step d, turn on the power supply of the heating platform, set the target temperature of the heating platform, and when the heating platform rises to the target temperature, use tweezers to sinter the preliminary sample Take it out, then place the preliminary sample on the central position of the heating table, cover the preliminary sample with a glass cover, and leave an air port of a set size for the preliminary sample, directly heat it at the target temperature, and finish the second-step heating and sintering process Afterwards, the copper substrate (1) and the printed board (2) are removed, and finally a nano-silver thermal interface material with a set heat conduction interconnection structure (6) is obtained on the chip (4). This embodiment adopts a two-step sintering method. In the se...

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Abstract

The invention discloses a method for preparing a microelectronic interconnection material through two-step sintering for nano-silver paste. Two heating manners of a heating furnace and a heating table are combined, the need of an adequate oxygen environment during a sintering process for the nano-silver paste is ensured for decomposing organic matter components in the nano-silver paste, more thorough sintering is achieved, nano-silver particles are closer in combination, and the defect of non-uniform heating of the upper surface, the lower surface and the interior of the nano-silver paste during the sintering process for the nano-silver paste is overcome, so that the sintering quality of the nano-silver paste is improved; and with the adoption of a low-temperature hybrid heating sintering method, the heat conductivity and mechanical property of the nano-silver paste after being sintered can be improved, the void ratio of the nano-silver paste after being sintered is lowered to a certain extent, the heat conduction efficiency of the microelectronic interconnection material is increased, and the quality of the sintered-formed microelectronic interconnection material of the nano-silver paste is improved. The method has an important industry value.

Description

technical field [0001] The invention relates to a low-temperature connection technology process, in particular to a method for low-temperature sintering of nano-silver paste and a lead-free preparation process for microelectronic interconnection materials, which are applied in the technical field of microelectronic interconnection materials. Background technique [0002] Due to its advantages of low sintering temperature, high electrical conductivity, high thermal conductivity, high bonding strength, and stable performance, nano silver paste has become one of the hot topics of international research. Low Temperature Joining Technique (LTJT, Low Temperature Joining Technique) based on nano-silver paste sintering is an alternative technology for lead-free chip interconnection materials, and is currently one of the most promising electronic packaging and interconnection technologies in the world. It is the development trend of interconnection materials in the future, and has im...

Claims

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Application Information

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IPC IPC(8): B22F3/10
CPCB22F3/1017
Inventor 刘嘉文路秀真黄时荣刘建影
Owner SHANGHAI UNIV
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