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A kind of conductive material and preparation method thereof

A conductive material and mixing technology, which is applied in cable/conductor manufacturing, circuits, electrical components, etc., can solve the problems of uneven density and uneven composition of conductive materials

Active Publication Date: 2019-06-28
FUJIAN ACETRON NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the play of various technical advantages depends on the quality of the conductive material used to prepare the film. In the prior art, the method of direct powder pressing and sintering is mostly used to prepare the conductive material, and the conductive material obtained by this method has uneven density or uneven composition. The problem that restricts the improvement of the performance of ITO thin film

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  • A kind of conductive material and preparation method thereof
  • A kind of conductive material and preparation method thereof
  • A kind of conductive material and preparation method thereof

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preparation example Construction

[0027] The invention provides a kind of preparation method of conductive material, comprises the following steps:

[0028] (1) Carrying out pressurized granulation treatment of materials comprising indium oxide and tin oxide to obtain primary particle mixture;

[0029] (2) Sintering the primary particle mixture obtained in the step (1) for the first time to obtain a primary sintered material;

[0030] (3) After pulverizing the primary sintered material obtained in the step (2), pressing to obtain a pre-sintered conductive material;

[0031] (4) Sintering the pre-sintered conductive material obtained in the step (3) again to obtain a conductive material.

[0032] The first sintering in the present invention realizes the initial solidification of the material and ensures the performance of the final conductive material. However, in order to ensure the degree of curing, the unavoidable volatilization phenomenon that exists when the first sintering temperature is too high will af...

Embodiment 1

[0057] Indium oxide and tin oxide with a purity of 99.995wt% are mixed at a mass ratio of 90:10, wherein the particle size of the indium oxide is 3 μm, and the particle size of the tin oxide is 2 μm. Put the mixture material into a nylon ball mill tank, add zirconia balls with a diameter of 15 mm according to the mass ratio of the balls to 1:1, and mix and ball mill at a speed of 500 rpm for 2 hours through the ball mill tank to obtain a mixture with a particle size of 2 μm.

[0058] Take out the mixture material, mix the mixture material and pure water 1kg: 60g, after mixing evenly, use a 10Mpa four-column hydraulic press to press the material into a columnar mold with a diameter of 100mm and a height of 5mm, and then use a ceramic rod Break into granules, and pass through a sieve to obtain a powder with a particle size of 2.5 mm.

[0059] A 1700°C silicon-molybdenum rod high-temperature atmospheric sintering furnace is used, and a high-purity alumina crucible is used to hold...

Embodiment 2

[0075] Indium oxide and tin oxide with a purity of 99.995wt% were mixed at a mass ratio of 99:1, wherein the particle size of indium oxide was 4 μm, and the particle size of tin oxide was 3 μm. Put the mixture material into a nylon ball mill tank, add zirconia balls with a diameter of 15 mm according to the mass ratio of the balls to 2:1, and mix and ball mill at a speed of 600 rpm for 2 hours through the ball mill tank to obtain a mixture with a particle size of 1.5 μm.

[0076] Take out the mixture material, mix the mixture material and pure water 1kg: 100g, mix evenly, use a 15Mpa four-column hydraulic press to press the material into a cylindrical mold with a diameter of 100mm and a height of 5mm, and press the material into a columnar sheet, and then use a ceramic The sticks were crushed into granules and passed through a sieve to obtain a powder with a particle size of 3 mm.

[0077] A 1700°C silicon-molybdenum rod high-temperature atmospheric sintering furnace is select...

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Abstract

The invention provides a conductive material and a preparation method thereof. The preparation method comprises the following steps: performing pressurized granulation on a material containing indium oxide and stannic oxide, performing primary sintering on the obtained primary particle mixture so as to obtain a primary sintered material; then sequentially grinding and pressing the obtained primary sintered material so as to obtain a pre-sintered conductive material; sintering again, thereby obtaining the conductive material. According to the preparation method disclosed by the invention, primary curing of the material is realized due to the primary sintering, the operational performance of the final conductive material is ensured, while in order to ensure the curing degree, an evitable volatile phenomenon caused by the extremely high sintering temperature impacts the uniformity of the final product component, the performance uniformity is further impacted, and the material is crushed into powder and remolded so as to further improve the uniformity of the component. Moreover, the material compactness is further improved due to pressing, the material curing is completed by combining with the subsequent re-sintering process, the pressed size is maintained, and size shrinkage is avoided.

Description

technical field [0001] The invention relates to the technical field of functional materials, in particular to a conductive material and a preparation method thereof. Background technique [0002] With the development of society and the rapid advancement of science and technology, the demand for functional materials is becoming increasingly urgent. New functional materials have become the key to the development of new technologies and emerging industries. With the development of industries such as displays, semiconductors, and solar energy, a transparent conductive oxide film (abbreviated as ITO film) has developed thereupon. Transparent conductive film refers to a film material with a light transmittance of more than 80% in the range of visible light, high conductivity, and a specific resistance value lower than 1×10 -3 Ω.cm. This kind of film has common optoelectronic properties such as band gap, high light transmittance in the visible spectrum region and low resistivity...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B1/08H01B13/00C04B35/01C04B35/622C04B35/626
CPCC04B35/01C04B35/622C04B35/62605C04B35/6261C04B35/62645C04B35/62675C04B35/62695C04B2235/3293C04B2235/5436C04B2235/77H01B1/08H01B13/00H01B13/0016
Inventor 陈钦忠张瑜
Owner FUJIAN ACETRON NEW MATERIALS CO LTD