Ultraviolet light-emitting diode (LED) epitaxial structure and growth method thereof

A technology of epitaxial structure and growth method, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low quantum efficiency in ultraviolet LEDs, electron overflow in the active layer, and low hole injection efficiency, so as to reduce quantum confinement Effect of Stark effect, optimized concentration distribution, and increased current injection efficiency

Active Publication Date: 2017-11-03
宁波安芯美半导体有限公司
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a violet LED epitaxial structure and its growth method, which is used to solve the prob

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ultraviolet light-emitting diode (LED) epitaxial structure and growth method thereof
  • Ultraviolet light-emitting diode (LED) epitaxial structure and growth method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0029] The following describes the implementation of the present invention through specific specific examples. Those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the following embodiments and the features in the embodiments can be combined with each other if there is no conflict.

[0030] It should be noted that the illustrations provided in the following embodiments only illustrate the basic idea of ​​the present invention in a schematic manner, although the figures only show the components related to the present invention instead of the number, shape, and shape of the components...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention provides an ultraviolet light-emitting diode (LED) epitaxial structure. The epitaxial structure sequentially comprises an AlN Buffer layer, a high-temperature UGaN layer, a composite N-type GaN layer, a multi-quantum well (MQW) structure, an active region light-emitting quantum-well layer, an electron blocking layer (EBL) and a P-type GaN layer from bottom to top, wherein the active region light-emitting quantum-well layer comprises n layers of In<x>Ga<1-x>N/Al<y>Ga<1-y>N multi-quantum wells, each layer of In<x>Ga<1-x>N/Al<y>Ga<1-y>N multi-quantum well comprises a main barrier and a movable barrier, the movable barrier is embedded into the main barrier, the main barrier comprises Al<y>Ga<1-y>N, the height of the main barrier is gradiently increased with the increase of Al constituent, the movable barrier comprises GaN, and the thickness of each layer of movable barrier is 1-20 nanometers. By the ultraviolet LED epitaxial structure and a growth method thereof, the stress in the quantum wells is reduced, the hole injection efficiency is improved, electrons of an active layer is prevented from overflowing, and the carrier recombination probability and the internal quantum efficiency of an ultraviolet LED are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a purple LED epitaxial structure and a growth method thereof which can effectively improve the internal quantum efficiency of the purple LED. Background technique [0002] Ultraviolet Light-Emitting Diodes based on III-nitride wide bandgap semiconductor materials are used in medical equipment, sterilization, environmental protection, military reconnaissance, true and false identification, fluorescence analysis, polymer curing, Ultraviolet light communication, general lighting and other fields have broad application prospects. [0003] GaN-based ultraviolet LEDs have the advantages of small size, long life, environmental protection and low-voltage power supply. They have broad application prospects in general lighting and a new generation of ultraviolet light sources, and have become a new research hotspot after blue LEDs. Near-ultraviolet refers to UVA with a wavel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L33/06H01L33/32H01L33/14H01L33/00
CPCH01L33/0075H01L33/06H01L33/14H01L33/325
Inventor 吴礼清周长健
Owner 宁波安芯美半导体有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap