Ultraviolet light-emitting diode (LED) epitaxial structure and growth method thereof

Abstract

The invention provides an ultraviolet light-emitting diode (LED) epitaxial structure. The epitaxial structure sequentially comprises an AlN Buffer layer, a high-temperature UGaN layer, a composite N-type GaN layer, a multi-quantum well (MQW) structure, an active region light-emitting quantum-well layer, an electron blocking layer (EBL) and a P-type GaN layer from bottom to top, wherein the active region light-emitting quantum-well layer comprises n layers of In<x>Ga<1-x>N / Al<y>Ga<1-y>N multi-quantum wells, each layer of In<x>Ga<1-x>N / Al<y>Ga<1-y>N multi-quantum well comprises a main barrier and a movable barrier, the movable barrier is embedded into the main barrier, the main barrier comprises Al<y>Ga<1-y>N, the height of the main barrier is gradiently increased with the increase of Al constituent, the movable barrier comprises GaN, and the thickness of each layer of movable barrier is 1-20 nanometers. By the ultraviolet LED epitaxial structure and a growth method thereof, the stress in the quantum wells is reduced, the hole injection efficiency is improved, electrons of an active layer is prevented from overflowing, and the carrier recombination probability and the internal quantum efficiency of an ultraviolet LED are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a purple LED epitaxial structure and a growth method thereof which can effectively improve the internal quantum efficiency of the purple LED. Background technique [0002] Ultraviolet Light-Emitting Diodes based on III-nitride wide bandgap semiconductor materials are used in medical equipment, sterilization, environmental protection, military reconnaissance, true and false identification, fluorescence analysis, polymer curing, Ultraviolet light communication, general lighting and other fields have broad application prospects. [0003] GaN-based ultraviolet LEDs have the advantages of small size, long life, environmental protection and low-voltage power supply. They have broad application prospects in general lighting and a new generation of ultraviolet light sources, and have become a new research hotspot after blue LEDs. Near-ultraviolet refers to UVA with a wavel...

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Problems solved by technology

[0005] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a violet LED epitaxial structure and its growth method, which is used to solve the problem of high quantum well stress, low hole injection efficiency, and electron overflow in the active layer in the prior art. , carrier recombination probability and low internal quantum efficiency of UV LEDs

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