A Magnetic Nonvolatile Memory Cell Structure Based on Bidirectional Spin Hall Effect

Abstract

The invention discloses a magnetic non-volatile memory unit structure based on the bidirectional spin Hall effect, comprising: a bidirectional spin Hall effect magnetic tunnel junction, a first transistor, a second transistor, a read word line, and a read bit lines, write word lines, write bit lines, and source lines; the new magnetic tunnel junction based on the bidirectional spin Hall effect includes a traditional vertical magnetic tunnel junction, a heavy metal layer, and a spin Hall effect coupling layer, wherein the The vertical magnetic tunnel junction includes a reference layer, a tunnel insulating layer and a first magnetic free layer from top to bottom, and the spin Hall effect coupling layer includes a second magnetic free layer and an insulating layer from top to bottom. The invention does not need auxiliary means, only by controlling the current flowing through the heavy metal layer to realize the switching of the vertical magnetic tunnel junction resistance between high resistance state, low resistance state and random resistance state, which can effectively reduce the writing power consumption of the magnetic storage unit, The write operation time of the magnetic memory cell is shortened.

Description

Technical field [0001] The invention relates to the field of memory, in particular to a magnetic non-volatile memory cell structure based on the bidirectional spin Hall effect. Background technique [0002] Traditional static random access memory and dynamic random access memory are both volatile memories, and they need continuous power supply during their working process. With the development of the manufacturing process, the power consumption problem caused by leakage and refresh current has become more and more serious, which to a large extent limits the further improvement of memory performance. In recent years, a variety of non-volatile storage solutions, such as phase change storage, resistive storage, conductive bridge storage, magnetic storage, etc. have been rapidly developed, which is expected to replace the storage mode based on traditional transistors and capacitors and become the next generation of non-Von Neumann Part of the MAN computer architecture. Among them, ...

AI Technical Summary

Problems solved by technology

The auxiliary scheme based on the external magnetic field will weaken the stability of the memory cell and limit the storage density of SHE-MRAM to a certain extent

The STT-based auxiliary scheme requires relatively complex peripheral circuits to achieve precise coordination of multiple write electrical pulses. At the same time, this scheme may cause breakdown of the magnetic tunnel junction insulating layer, resulting in damage to the memory cell.

In addition, the previous SHE-MRAM only used the unidirectional polarization current generated by the spin Hall effect, resulting in low polarizability and high write power consumption.

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