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Bridging material for improving conductivity of industrial graphene film and bridging method thereof

A technology of bridging material and electrical conductivity, which is applied in the field of conductive film layer preparation, can solve the problems of limited improvement of electrical conductivity, increased contact resistance of microchips, and increased area of ​​low-conductivity regions, and achieves obvious effects and improved conductivity.

Active Publication Date: 2017-11-07
南京开钰安全科技有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the industrial graphene film layer composed of graphene microsheet stacks prepared by redox method or liquid phase exfoliation method, the presence of multiple layers on the microscopic scale will lead to an increase in the contact resistance between the microsheets, and the small size of the microsheets will lead to The area of ​​the low-conductivity region in the film layer increases, and the existence of lattice defects in a single sheet makes the conductivity of each graphene drop
The above-mentioned three aspects factors finally lead to the actual value of the overall conductivity of the film layer (less than 10 4 S / m) and theoretical value (10 8 S / m) is very different
Some studies have proposed to adsorb conductive additives on the surface of graphene to improve the overall conductivity of the film layer. However, the adsorption method is usually through carboxylation of graphene. Oxygen functional groups, ultimately leading to limited improvement in conductivity

Method used

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  • Bridging material for improving conductivity of industrial graphene film and bridging method thereof
  • Bridging material for improving conductivity of industrial graphene film and bridging method thereof
  • Bridging material for improving conductivity of industrial graphene film and bridging method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] The bridging material is selected from a compound (CNTs / Ag) formed by multi-walled carbon nanotubes and nano-silver particles. During preparation, commercially available lengths of 10-30 μm and multi-walled carbon nanotubes (commercially available) with a diameter of 10-20nm are selected. The bridging material adopts the following preparation steps:

[0030] Step 1: The multi-walled carbon nanotubes are dispersed in a Tris base solution, wherein the concentration of the multi-walled carbon nanotubes is 20 mg / mL, and the concentration of the Tris base is 1 mg / mL.

[0031] Step 2: Add dopamine hydrochloride to the dispersion in step 1 at a concentration of 0.5 mg / mL.

[0032] Step 3: The dispersion liquid prepared in step 2 is stirred at a constant speed for more than 24 hours, then filtered, and the obtained solid matter is washed and vacuum-dried;

[0033] Step 4: prepare the aqueous solution of silver nitrate of 0.05mol / L, drip ammoniacal liquor into this solution unt...

Embodiment 2

[0055] The bridging method is the same as in Example 1 steps a-e, but wherein the concentration of Tris alkali solution is 2g / L, the concentration of dopamine hydrochloride is 2g / L, and the bridging material is silver nanowires (commercially available) with a diameter of 70nm and a length of 100 to 200 μm , the sheet conductivity is 8.7x10 6 S / m, and dispersed in the solution according to 50g / L.

[0056] The electrical conductivity values ​​of the prepared graphene film layers are shown in Table 3.

[0057] The conductivity of the graphene film before and after the bridging of the silver nanowires in the embodiment 2 of table 3

[0058]

[0059]

Embodiment 3

[0061] The bridging method is the same as in Example 1 steps a-e, but wherein the concentration of Tris alkali solution is 1g / L, the concentration of dopamine hydrochloride is 1g / L, and the bridging material is selected from copper nanowires (commercially available) with a diameter of 50 to 200nm and a length of 100 to 300 μm. ), the sheet conductivity is 1.8x10 6 S / m, and dispersed in the solution according to 30g / L.

[0062] The electrical conductivity values ​​of the prepared graphene film layers are shown in Table 3.

[0063] The electrical conductivity of the graphene film layer before and after the copper nanowire bridge of table 4 embodiment 3

[0064]

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Abstract

The invention discloses a bridging material for improving the conductive performance of an industrial graphene film and a bridging method thereof. The bridging material has a tabletting conductivity of more than 10<6> S / m, a diameter between 10 and 200 nm, and a length between 10 and 300 microns, wherein the ratio of the length of the bridging material to graphene sheet diameter is between 5 to 1 and 150 to 1. After the bridging material and industrial graphene slurry are uniformly mixed and formed into a film, the bridging material is connected with a plurality of pieces of graphene to form a bridging structure, thus increasing an electron transfer path between the surfaces of the graphene sheets, and reducing the impedance of the electron transfer process, thereby improving the overall conductivity of the film.

Description

technical field [0001] The invention belongs to the field of conductive film preparation, in particular to a bridging material and a bridging method for improving the electrical conductivity of industrial graphene film layers. Background technique [0002] At present, the development of conductive materials is gradually developing in the direction of high conductivity, thin layer, light weight and flexibility. The theoretical research results of graphene have proved that it has 10 8 The conductivity of S / m has bright prospects in the field of conductive materials. However, in the industrial graphene film layer composed of graphene microsheet stacks prepared by redox method or liquid phase exfoliation method, the presence of multiple layers on the microscopic scale will lead to an increase in the contact resistance between the microsheets, and the small size of the microsheets will lead to The area of ​​the low-conductivity region in the film layer increases, and the existe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/168B22F9/24B22F1/00H01B1/02H01B1/04B82Y40/00B82Y30/00
CPCH01B1/02H01B1/04B82Y30/00B82Y40/00B22F9/24C01P2004/80C01P2004/04B22F1/0547
Inventor 王源
Owner 南京开钰安全科技有限责任公司