A kind of chromium-free metallization method of plastic substrate
A technology of plastic base material and chrome metal, applied in metal material coating process, superimposed layer plating, vacuum evaporation plating and other directions, can solve the problems of water resources waste, pollution of human ecological environment, etc., and achieve emission reduction and treatment. The effect of simplifying the process and reducing the discharge of wastewater
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Embodiment 1
[0031] Such as figure 1 As shown, the chromium-free metallization method for plastic substrates disclosed in this embodiment is specifically implemented as follows:
[0032] 1) Implement dry cleaning method to degrease and decontaminate the plastic substrate
[0033] Implement dry cleaning method on ABS plastic substrate, use hydrocarbon cleaning and then drying;
[0034] 2) Physical vapor deposition (PVD) metallization of plastic substrates
[0035] The ABS plastic substrate is subjected to physical vapor deposition plasma cleaning in sequence, and the bonding layer and the surface layer are plated. The process conditions of physical vapor deposition plasma cleaning are: bias voltage 350V, duty cycle 50%, argon flow rate 300SCCM, furnace vacuum pressure 0.2Pa, time 10min.
[0036] The process conditions for plating the bonding layer are: DC power sputtering, DC power sputtering power supply current is 2A, deposition time is 10min, bias voltage is 120V, duty cycle is 50%, a...
Embodiment 2
[0044] Such as figure 1 As shown, the chromium-free metallization method for plastic substrates disclosed in this embodiment is specifically implemented as follows:
[0045] 1) Implement dry cleaning method to degrease and decontaminate the plastic substrate
[0046] The dry cleaning method is implemented on the ABS plastic substrate, which is cleaned by hydrocarbon and then dried.
[0047] 2) Physical vapor deposition (PVD) metallization of plastic substrates
[0048] The ABS plastic substrate is subjected to physical vapor deposition plasma cleaning in sequence, and the bonding layer and the surface layer are plated. The process conditions of physical vapor deposition plasma cleaning are: bias voltage 450V, duty cycle 60%, argon flow rate 400SCCM, furnace vacuum pressure 0.2Pa, time 8min.
[0049] The process conditions of bonding layer plating are as follows: the medium frequency power supply current is 300A, the voltage is 500V, the deposition time is 70min, the bias vo...
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