Complementary metal oxide semiconductor (CMOS) compatible temperature detector and manufacturing method thereof

Abstract

The present invention discloses a CMOS compatible temperature detector and a manufacturing method thereof. According to the present invention, by presetting a PAD metal buried layer or a top layer back channel metal buried layer used for manufacturing electrodes in the same layer with a PAD layer or a top layer back channel metal interconnection layer, and then manufacturing the thermistors after the injection doping or online doping processing on the PAD metal buried layer or a top layer back channel metal buried layer, a temperature detector is formed, so that the independent electrode layer and thermistor layer set on a CMOS back channel circuit are saved, and the thickness (size) of the device and the manufacturing steps of a technology are reduced, and accordingly, the cost is reduced. The CMOS compatible temperature detector and the manufacturing method thereof are simple in technology and are completely compatible with a CMOS technology, at the same time, by utilizing the thermistors of high sensitivity, a sensor of high performance can be formed.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit processing, in particular to a temperature detector fully compatible with CMOS technology and a manufacturing method thereof. Background technique [0002] In recent years, with the development of integrated circuit technology, the integration technology of temperature detectors has become an important trend. [0003] At present, CMOS temperature detectors usually use CMOS circuits to make temperature detector circuits based on bandgap (band gap). Since the temperature detector circuit is fabricated on the chip substrate and integrated with the substrate, it has thermal conduction performance, so that the external temperature can be conducted to the sensor circuit through the metal arranged on the substrate to sense the temperature. [0004] The CMOS temperature detector integrates the temperature sensing element and the peripheral circuit on the same chip, so compared wi...

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Problems solved by technology

[0006] However, when the existing CMOS temperature detectors are used to manufacture electrodes and thermistors, it is usually necessary to set up independent electrode layers and thermistor layers on the CMOS back-end circuit, and then further form electrodes and thermistor layers by patterning. Resistance, thus not only increasing the thickness (volume) of the device, but also increasing the steps of the process, resulting in an increase in cost

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