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A kind of preparation method of homogeneous polysilicon suede surface

A polycrystalline silicon and polycrystalline silicon wafer technology, which is applied in the field of solar cells, can solve the problems of uneven control of chemical reactions, poor uniformity of the surface structure of polycrystalline silicon suede, etc.

Active Publication Date: 2018-12-07
NANTONG MEIMING CHINLON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem mainly solved by the present invention: in order to solve the problem of poor uniformity of the surface structure of the polysilicon textured surface due to the uneven control of the chemical reaction when preparing the polysilicon textured surface by chemical acid etching, a preparation of a polysilicon textured surface with a uniform structure is provided method

Method used

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  • A kind of preparation method of homogeneous polysilicon suede surface

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example 1

[0016] According to the mass ratio of 1:5, tetrapropylammonium hydroxide and deionized water were mixed, at room temperature, stirred and mixed at 300r / min for 25min to obtain a mixed solution, and then tetraethyl orthosilicate was added dropwise to the mixed solution to control The dripping time is 25min. After the dripping is completed, stand at room temperature for 10h to obtain a static solution. According to a mass ratio of 1:10, mix the static solution with deionized water to obtain a diluted solution, and then pass nitrogen to remove the air. Under the conditions of nitrogen atmosphere and 0°C ice-water bath, add 15% mass fraction of butyl orthotitanate isopropanol solution to the diluent dropwise at a dropping rate of 1mL / min, then keep it warm for 2 hours, and then ultrasonically disperse at 200W 10min to obtain a dispersion; according to the mass ratio of 1:3:5, mix deionized water, 25% hydrofluoric acid and 65% nitric acid solution, and stir at room temperature for 2...

example 2

[0018] According to the mass ratio of 1:5, tetrapropylammonium hydroxide and deionized water were mixed, at room temperature, stirred and mixed at 400r / min for 27min to obtain a mixed solution, and then tetraethyl orthosilicate was added dropwise to the mixed solution to control The dropping time is 27 minutes. After the dropping is completed, stand at room temperature for 11 hours to obtain a static solution. According to a mass ratio of 1:10, mix the static solution with deionized water to obtain a diluted solution, and then pass nitrogen to remove the air. Under the conditions of nitrogen atmosphere and ice-water bath at 2°C, add a 15% mass fraction of butyl orthotitanate isopropanol solution to the diluent dropwise at a rate of 1mL / min, then keep it warm for 3 hours, and then disperse it ultrasonically at 250W. 12min to obtain a dispersion; according to the mass ratio of 1:3:5, mix deionized water, 25% hydrofluoric acid and 65% nitric acid solution, and stir at room tempera...

example 3

[0020] According to the mass ratio of 1:5, tetrapropylammonium hydroxide and deionized water were mixed, at room temperature, stirred and mixed at 500r / min for 30min to obtain a mixed solution, and then tetraethyl orthosilicate was added dropwise to the mixed solution to control The dropping time is 30min. After the dropping is completed, stand at room temperature for 12 hours to obtain a static solution. According to a mass ratio of 1:10, mix the static solution with deionized water to obtain a diluted solution, and then pass nitrogen to remove the air. Under a nitrogen atmosphere and a 5°C ice-water bath, add a 15% mass fraction of butyl orthotitanate isopropanol solution to the diluent dropwise at a rate of 1 mL / min, then keep it warm for 3 hours, and then disperse it ultrasonically at 300W. 15min to obtain a dispersion; according to the mass ratio of 1:3:5, mix deionized water, 25% hydrofluoric acid and 65% nitric acid solution, and stir at room temperature for 30min to obt...

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Abstract

The invention belongs to the technical field of solar cells, and specifically relates to a preparation method of a uniform polycrystalline silicon texture. Silica sol serves as a negative carrier, the material of a crystal structure is wrapped on the surface of the material, a thin film of a molecular sieve structure is formed, and then corrosion preparation is carried out on the surface of polycrystalline silicon through acid corrosion modification; due to the fact that particles of the crystal structure are loaded on the surface of the material, the acid corrosion rate is reduced, the surface of the loaded material cannot be in contact with an acid corrosion solution, etching is carried out on the surface of the polycrystalline silicon material through a soft template formed by the thin film, and finally the polycrystalline silicon texture of the uniform structure is prepared.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a method for preparing a uniform polycrystalline silicon textured surface. Background technique [0002] Crystalline silicon solar cells (including monocrystalline silicon cells and polycrystalline silicon cells) firmly occupy the leading position in the international photovoltaic market due to their mature production process and excellent photoelectric conversion performance. In the process of researching polycrystalline silicon solar cells, people found Some key technologies that affect battery efficiency, including rapid thermal processing (RTP), matrix material impurity gettering, surface passivation and bulk passivation, and surface texturing, etc., among these technologies, only surface texturing has not been well developed. solution, and several other technologies are relatively mature and have been applied on a large scale in industrial production. In the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0236H01L31/18
CPCH01L31/02363Y02E10/50Y02P70/50
Inventor 黄彬彬季美
Owner NANTONG MEIMING CHINLON