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Growing method for inhibiting defect of carbon inclusion in silicon carbide single crystal

A technology of silicon carbide single crystal and growth method, applied in single crystal growth, single crystal growth, crystal growth and other directions, can solve the problems of complicated growth process, fluctuation of impurity concentration, affecting the conductivity of silicon carbide substrate, etc. The effect of volatilization and dissipation, eliminating the formation of inclusions, and ensuring unity

Active Publication Date: 2017-11-24
SICC CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method will change the original raw material composition and complicate the growth process; in addition, the addition of silicon oxide will introduce additional impurities, resulting in unstable fluctuations in the impurity concentration in the crystal, which may affect the silicon carbide substrate. The conductivity of the bottom

Method used

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  • Growing method for inhibiting defect of carbon inclusion in silicon carbide single crystal
  • Growing method for inhibiting defect of carbon inclusion in silicon carbide single crystal
  • Growing method for inhibiting defect of carbon inclusion in silicon carbide single crystal

Examples

Experimental program
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Effect test

Embodiment 1

[0025] A growth method for suppressing carbon inclusion defects in silicon carbide single crystals, the specific steps of which are:

[0026] (1) After loading the silicon carbide raw material and seed crystal in the graphite crucible, put it into the single crystal growth chamber and seal the chamber, and pass protective gas into the growth chamber;

[0027] (2) After introducing protective gas into the growth chamber for 2 hours, gradually reduce the pressure in the growth chamber from 1 atmospheric pressure to 5 mbar, and at the same time, gradually increase the furnace temperature from room temperature to 2500 °C. After the pressure and temperature, keep the stable growth at this low pressure and temperature for 35h, which is the first stage of crystal growth;

[0028] (3) With the end of the first stage of growth, slowly increase the growth pressure in the growth chamber from 5mbar to 50mbar while keeping the temperature stable. After rising to the predetermined pressure,...

Embodiment 2

[0034] A growth method for suppressing carbon inclusion defects in silicon carbide single crystals, the specific steps of which are:

[0035] (1) After loading the silicon carbide raw material and seed crystal in the graphite crucible, put it into the single crystal growth chamber and seal the chamber, and pass protective gas into the growth chamber;

[0036] (2) After the protective gas was introduced into the growth chamber for 3 hours, the pressure in the growth chamber was gradually reduced from 1 atmospheric pressure to 50 mbar, and at the same time, the furnace temperature was gradually raised from room temperature to 2500 °C. After the pressure and temperature, keep the stable growth at this low pressure and temperature for 50h, which is the first stage of crystal growth;

[0037] (3) With the end of the first stage of growth, slowly increase the growth pressure in the growth chamber from 50mbar to 100mbar while keeping the temperature stable. After rising to the predet...

Embodiment 3

[0043] A growth method for suppressing carbon inclusion defects in silicon carbide single crystals, the specific steps of which are:

[0044] (1) After loading the silicon carbide raw material and seed crystal in the graphite crucible, put it into the single crystal growth chamber and seal the chamber, and pass protective gas into the growth chamber;

[0045] (2) After the protective gas was introduced into the growth chamber for 4 hours, the pressure in the growth chamber was gradually reduced from 1 atmospheric pressure to 25 mbar, and the furnace temperature was gradually increased from room temperature to 2000 °C. After the pressure and temperature, keep the stable growth at this low pressure and temperature for 20h, which is the first stage of crystal growth;

[0046] (3) With the end of the first stage of growth, slowly increase the growth pressure in the growth chamber from 25mbar to 75mbar while keeping the temperature stable. After rising to the predetermined pressure...

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Abstract

The invention belongs to the technical field of crystal growth, and particularly relates to a growing method for inhibiting a defect of a carbon inclusion in a silicon carbide single crystal. The method provided by the invention comprises growth at two stages; different pressures are controlled to inhibit volatilization and dissipation of a silicon component, so that the formation of the inclusion is reduced or even eliminated. According to the growing method provided by the invention, the inhibition of the formation of the carbon inclusion can be realized through adjusting a simple growing process without the need for adding foreign matters in a growing raw material, and the growing method is easy to implement and lower in cost.

Description

technical field [0001] The invention belongs to the technical field of crystal growth, in particular to a growth method for suppressing carbon inclusion defects in silicon carbide single crystals. Background technique [0002] Silicon carbide single crystal is one of the most important third-generation semiconductor materials. It is widely used in power electronics, RF devices, optoelectronic devices and other fields. The current mainstream silicon carbide single crystal growth technology is the physical vapor transport (PVT) method, that is, the gas phase source generated by the sublimation of silicon carbide raw materials is transported to the seed crystal at high temperature for recrystallization. [0003] The growth process of silicon carbide single crystal grown by PVT method is carried out in a closed graphite crucible, so the growth environment at high temperature is in a carbon-rich atmosphere. In the early stage of crystal growth, because the vapor partial pressur...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/00
CPCC30B23/002C30B29/36
Inventor 高超宗艳民李长进李加林
Owner SICC CO LTD
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