Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method of cutting and squaring single crystal silicon round rod by utilizing diamond line

A technology of diamond cutting wire and single crystal silicon, which is applied in metal processing equipment, fine working devices, grinding machines, etc., can solve problems such as poor verticality, large head margins, and greater impact on finished products, and achieve cost reduction, easy-to-operate effect

Active Publication Date: 2017-12-01
COMTEC SOLAR JIANGSU
View PDF6 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the actual production process, using the above-mentioned production process to produce single crystal square rods, it was found that when the diamond cutting wire method is used for processing, the specifications of the diamond cutting wire and the cutting parameters selected are different, and the finished product is greatly affected: Some square rods have poor surface flatness, low cutting efficiency, uneven cutting surface, poor verticality, and large and small ends, that is, large head margins or small tail margins.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method of cutting and squaring single crystal silicon round rod by utilizing diamond line
  • Method of cutting and squaring single crystal silicon round rod by utilizing diamond line

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0041] In an exemplary embodiment of the present invention, a method for squaring a monocrystalline silicon round rod by using a diamond wire is provided. Using high-speed feeding of diamond wires to cut monocrystalline silicon round rods;

[0042] Among them, the specification and size of the monocrystalline silicon round rod: the diameter is 216±3mm, and the length is determined according to the requirements of the rod.

[0043] The diamond cutting wire is: the substrate is a high-carbon steel wire with a diameter of 0.39mm-0.42mm, and the substrate is embedded with diamond particles with a particle size of 40um-50um;

[0044] The specific steps of the prescribing method are as follows:

[0045] (1) Winding: The diamond cutting wire protrudes from the winding drum, winds on the tensioning wheel arranged in a staggered manner, and then winds on the guide wheel, and puts the diamond cutting wire horizontally above the workbench; through the cutting wheel and The guide wheel ...

Embodiment 2

[0051] When the other solutions are the same as in the first embodiment, the feed speed is increased to 1.0mm / min, and the feed rate of the new line is reduced from 10m / min to 8m / min. Such as figure 1 , figure 2 As shown, since there are three tensioning wheels, including the first tensioning wheel 1, the second tensioning wheel 2 and the third tensioning wheel 3 which are arranged in a staggered order from bottom to top. A section of square head mounting column 21 is vertically installed at the wheel center of the second tensioning wheel 2, and the end of the square head mounting column 21 has a section of fastening column 22 with external threads. At this time, replace the second tensioning wheel 2 to ensure the tension Validity and accuracy of testing.

Embodiment 3

[0053]When the other solutions are the same as in Embodiment 1, the feed speed is increased to 1.1mm / min, and the feed of the new line is 8m / min. Change the size of the second tensioning wheel accordingly to ensure the thread tension.

[0054] Generally, the surface roughness of the processed monocrystalline silicon square rod is about 0.8-1.0um, and the verticality of the cut surface is 90±0.2° or 90±0.3°. For the crystalline silicon square bar sample, the verticality of adjacent surfaces, surface roughness and cutting time are tested respectively, and Table 1 is obtained, as follows:

[0055] Table 1

[0056]

[0057] It can be seen from the above table that the verticality of the cutting surface is stable and the verticality is good; the surface roughness has been greatly improved, and the cutting time has not been extended.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Diameteraaaaaaaaaa
Particle sizeaaaaaaaaaa
Verticalityaaaaaaaaaa
Login to View More

Abstract

The invention provides a method of cutting and squaring a single crystal silicon round rod by utilizing a diamond line. The method utilizes high-speed feeding of the diamond line to cut the single crystal silicon round rod and comprises the following concrete steps of (1) wire winding: winding a diamond wire to form a wire net of a well-shaped structure after the diamond passes through a cutting wheel and guide wheels; (2) crystal rod mounting: mounting a crystal rod on a workbench, enabling the diamond cutting wire to form a field angle between the crystal rod and each of the guide wheels at the front, the back, the left and the right of the crystal rod; (3) parameter setting: setting a line tension, a feeding speed and a new wire feeding quantity according to the diameter of the crystal rod; (4) cutting: carrying out continuous cutting through relative movement of the diamond cutting wire and the single crystal round rod to be cut; and (5) finishing cutting, and ending a program. The method has the advantages that the feeding speed is increased, the new wire feeding quantity and the steel wire consumption quantity are reduced, and the quality of a quasi-square rod subjected to squaring is in a controlled state.

Description

technical field [0001] The invention relates to the technical field of single crystal silicon processing, in particular to a method for cutting a square rod of single crystal silicon by using a diamond wire. Background technique [0002] The existing wire squaring technology originated from the multi-wire cutting technology, which is a physical processing method that does not affect the characteristics of the workpiece. Through the high-speed reciprocating motion of the staggered wire mesh, the abrasive grains are brought into the workpiece processing area for grinding, and finally the monocrystalline silicon round rod is cut into a quasi-square rod. During the whole cutting process, it mainly involves high-speed moving metal wire, cutting sand (green silicon carbide), cutting fluid and cutting workpiece. The cutting process is a complex process in which the metal wire, the cutting sand in the cutting fluid and the workpiece contact each other. The cutting sand plays the r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): B28D5/04B28D7/00B28D7/02B28D7/04B24B27/06
CPCB24B27/0633B28D5/0058B28D5/0076B28D5/0082B28D5/042
Inventor 刘聪贤潘新兴朱眉清
Owner COMTEC SOLAR JIANGSU
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products