Fabrication method and detector of barrier impurity band detector with microporous negative electrode structure

Abstract

The invention provides a preparation method of a gallium arsenide Te-doped barrier impurity band terahertz detector with a microporous negative electrode structure. The preparation method comprises steps of making micropores, electrodes, etc. The invention also provides a gallium arsenide Te-doped barrier impurity band terahertz detector with a microporous negative electrode structure made by the preparation method of the gallium arsenide Te-doped barrier impurity band terahertz detector with the microporous negative electrode structure. The preparation method has the following advantages: through etching the microporous structure, etching areas and then defects from etching damages are reduced. Thus, dark current of the detector is reduced and detectivity is improved. In addition, by arranging the negative electrode on a high conductivity gallium arsenide substrate in the micropore, transporting paths of photo-generated carriers are shortened; possibility of capturing the photo-generated carriers by impurities and defects in the high conductivity gallium arsenide substrate is reduced; collection efficiency of the photo-generated carriers is improved; and detectivity of the detector is further increased.

Description

technical field [0001] The present invention relates to a terahertz detector, in particular to a preparation method of a barrier impurity band detector with a microporous negative electrode structure, especially to a gallium arsenide-doped tellurium barrier impurity band detector with a microporous negative electrode structure A method for preparing a hertz detector and a detector thereof. Background technique [0002] The gallium arsenide-doped tellurium barrier impurity band detector works in a low-temperature environment below 5K, and can effectively detect terahertz radiation in the range of 100-300 μm. It has broad application prospects in civil, military and aerospace fields. At present, the traditional mesa-type barrier impurity band detector mainly has the following two preparation methods: the first preparation method is to grow an absorbing layer on the upper surface of a high-conductivity substrate by vapor phase epitaxy (VPE), and then pass The liquid phase epi...

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Problems solved by technology

The advantage of this preparation method is that the transport path of photogenerated carriers is shorter and the collection efficiency is higher; the disadvantage is that the etching area is larger, and a large number of defects are easily generated, resulting in an increase in dark current, a decrease in detection sensitivity, and two ion implantations. And rapid thermal annealing, easy to cause damage to the material, increasing the difficulty of the process

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