A kind of method that vacuum energy prepares sponge body graphene

A technology of sponge and graphene, applied in the direction of graphene, single-layer graphene, chemical instruments and methods, etc., can solve the problems of difficult preparation of single-layer graphene, low efficiency of chemical growth method, high energy consumption of production method, etc. problem, to achieve the effect of good dispersion, large capacity and low cost

Active Publication Date: 2020-05-12
向新多 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The chemical growth method is inefficient and not suitable for industrial disclosure production
The physical exfoliation method mainly uses cheap graphite as a raw material, and by applying mechanical force to the graphite crystal, the graphite layers are exfoliated, breaking the van der Waals force between the graphite layers, and forming a single-layer graphene. Although the prospect is very good, the current technology It is difficult to prepare a large amount of single-layer graphene
[0004] Graphene is also prepared by electric arc method in the prior art, but its production method consumes a lot of energy, and the number of graphene layers prepared is relatively high, so it cannot be produced into single-layer graphene in large quantities at low cost.

Method used

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  • A kind of method that vacuum energy prepares sponge body graphene
  • A kind of method that vacuum energy prepares sponge body graphene
  • A kind of method that vacuum energy prepares sponge body graphene

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] Send the graphite rod into the reaction chamber of the vacuum reactor, and use an arc with a temperature of 12000°C to ionize the graphite rod in a vacuum environment to obtain graphene in the inner wall area of ​​the reaction chamber. The arc-releasing device may have an input voltage of 55V and an input current of 4A during discharge; the frequency of the input power may be 40hz.

[0019] 1. Raman test is carried out on the obtained graphene, the result is as follows figure 1 shown, from figure 1 It can be seen that the graphene in this embodiment is highly symmetric and highly ordered single-crystal graphite with extremely high purity, and the graphene basically only has a single 2D peak, indicating that the graphene is completely exfoliated into a single sheet of graphene.

[0020] 2. Scanning the obtained graphene with a transmission electron microscope, the results are as follows: figure 2 shown. from figure 2 It can be seen that when zooming in at 1.2K, lar...

Embodiment 2

[0029] Send the graphite rod into the reaction chamber in the vacuum reactor, and in a vacuum environment, use an arc with a temperature of 10,000°C to ionize the graphite rod to obtain graphene in the inner wall area of ​​the reaction chamber; the discharge voltage of the arc is The discharge current is 50V, and the discharge current is 3A; the electric frequency during discharge is 30hz.

[0030] The graphene obtained is identified as sponge graphene by the method in Example 1.

Embodiment 3

[0032] The graphite rod is sent into the reaction chamber in the vacuum reactor, and under the vacuum environment, the graphite rod is ionized by an electric arc with a temperature of 13000° C., and a single-layer graphene is obtained in the inner wall area of ​​the reaction chamber; The discharge voltage is 60V, the discharge current is 5A; the frequency of electricity during discharge is 45hz.

[0033] The graphene obtained is identified as sponge graphene by the method in Example 1.

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Abstract

The invention discloses a method for using vacuum energy to prepare cavernous body graphene. A graphite rod is fed into a reaction chamber in a vacuum reaction still, under a vacuum environment, electric arcs of which the temperature is 10,000-13,000 DEG C are utilized to ionize the graphite rod, and single-layer graphene is obtained in the inner wall area of the reaction chamber. The method is utilized so that single-layer graphene with high purity can be purified and produced in one time under a low voltage and small current condition, the thickness of single-layer graphene is 0.34 nm-1.3 nm, and the size is 4-6 micrometers. The primary finished product obtaining rate exceeds 30%, and the method has the highest one-time raw material purification rate of graphene currently. In the production process, no sewage is drained, the cost is low, the product purity is high, the energy dissipation is low, the performance is excellent, the dispersity is good, and the product is not easily oxidized, and has the features of magnetic performance and the like. The prepared single-layer graphene contains multiple high-performance nanometer carbon-based materials like zero-dimension fullerene, one-dimension carbon nano tubes, two-dimension graphene, and three-dimension super-nanometer graphite crystals.

Description

Technical field: [0001] The invention belongs to the field of graphene preparation, in particular to a method for preparing sponge graphene by vacuum energy. Background technique: [0002] Single-layer graphene has a perfect two-dimensional crystal structure, its crystal format is a hexagon surrounded by six carbon atoms, and its thickness is one atomic layer. Graphene is 100 times stronger than the best steel and even stronger than diamond. Graphene has good electrical conductivity. Graphene is a new generation of transparent conductive materials. [0003] At present, the main preparation methods of graphene are chemical growth method and physical exfoliation method. The chemical growth method has low efficiency and is not suitable for industrialized disclosure production. The physical exfoliation method mainly uses cheap graphite as a raw material, and by applying mechanical force to the graphite crystal, the graphite layers are exfoliated, breaking the van der Waals f...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/19C01B32/152C01B32/158C01B32/15
CPCC01B2204/02C01B2204/04C01B2204/32
Inventor 胡纬浩向新多
Owner 向新多
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