Photodetector methods and photodetector structures
A technology of photodetector and light absorbing layer, which is applied in photovoltaic power generation, electric solid state devices, semiconductor devices, etc.
Active Publication Date: 2017-12-15
GLOBALFOUNDRIES U S INC MALTA
View PDF4 Cites 1 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Defects and / or improper dopant profiles can result in a significant amount of unwanted dark current flowing through the photodetector
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0046] As mentioned above, an optoelectronic integrated circuit chip generally includes various optical devices in addition to electronic devices (eg, complementary metal-oxide-semiconductor (CMOS) devices or other electronic devices). An example optical device is a photodetector (also referred to herein as a photosensor or optical receiver) consisting of a layer of light absorbing material and one or more photodiodes ( For example, PN diodes or PIN diodes). A photodetector receives an optical signal (eg, light) from an optical waveguide (eg, a silicon waveguide) and converts the optical signal into an electronic signal (eg, a stream of electrons) for processing by one or more electronic devices. For example, light absorbing materials can include, but are not limited to, silicon, germanium, indium gallium arsenide, lead sulfide, and mercury cadmium telluride. These different light absorbing materials absorb light in different wavelength ranges. For example, germanium absorbs...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| length | aaaaa | aaaaa |
Login to View More
Abstract
Disclosed are a method of forming a photodetector and a photodetector structure. In the method, a polycrystalline or amorphous light-absorbing layer is formed on a dielectric layer such that it is in contact with a monocrystalline semiconductor core of an optical waveguide. The light-absorbing layer is then encapsulated in one or more strain-relief layers and a rapid melting growth (RMG) process is performed to crystallize the light-absorbing layer. The strain-relief layer(s) are tuned for controlled strain relief so that, during the RMG process, the light-absorbing layer remains crack-free. The strain-relief layer(s) are then removed and an encapsulation layer is formed over the light-absorbing layer (e.g., filling in surface pits that developed during the RMG process). Subsequently, dopants are implanted through the encapsulation layer to form diffusion regions for PIN diode(s). Since the encapsulation layer is relatively thin, desired dopant profiles can be achieved within the diffusion regions.
Description
[0001] This application is a divisional application of the Chinese patent application with the application number 201610479979.4, the application date is June 27, 2016, and the invention title is "photodetector method and photodetector structure". technical field [0002] The present invention relates to optoelectronic integrated circuits, and more particularly, to methods of forming photodetectors (eg, germanium photodetectors) and photodetector structures with minimized dark current. Background technique [0003] Generally speaking, an optoelectronic integrated circuit chip generally includes various optical devices in addition to electronic devices (eg, complementary metal oxide semiconductor (CMOS) devices or other electronic devices). One example optical device is a photodetector (also referred to herein as a photosensor or optical receiver) consisting of a layer of light-absorbing material and one or more photodiodes (e.g., PN diodes or PIN diodes) are made. The photo...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/144H01L27/146H01L31/0203H01L31/0216H01L31/0232H01L31/028H01L31/103H01L31/105H01L31/18
CPCH01L27/1443H01L27/1446H01L27/14629H01L31/0203H01L31/02161H01L31/02327H01L31/028H01L31/103H01L31/105H01L31/1808H01L31/1872Y02P70/50Y02E10/50
Inventor J·J·埃利斯莫纳格汉J·C·S·霍尔M·H·哈提尔E·W·基埃瓦拉S·M·尚克
Owner GLOBALFOUNDRIES U S INC MALTA