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Method for silicon ingot

A technology for silicon ingots and silicon ingots is applied in the field of semiconductor preparation, which can solve the problems of complex operation process and high production cost, and achieve the effects of simple operation process, low production cost and good work performance.

Inactive Publication Date: 2017-12-19
JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a method for silicon ingot casting, which solves the problems of complex operation process and high production cost in the process of preparing silicon ingot containing doping elements

Method used

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  • Method for silicon ingot
  • Method for silicon ingot

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Embodiment Construction

[0033] The core of the invention is to provide a silicon ingot casting method, the whole preparation process is simple to operate, the production cost is low, and the resistivity uniformity of the obtained silicon ingot is good.

[0034] In order to enable those skilled in the art to better understand the solution of the present invention, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0035] Please refer to figure 1 , figure 1 A flow chart of a silicon ingot casting method provided by an embodiment of the present invention, the method may include:

[0036] Step...

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Abstract

The invention discloses a method for a silicon ingot. The method comprises the following steps of adding a dopant for doping elements in a silicon material, heating the silicon material in a crucible of a single crystal furnace into a molten state, stopping heating, and cooling the silicon material to enable the silicon material to be solidified within 2h to obtain the doped element-containing silicon ingot. According to the method for the silicon ingot, as the silicon material is solidified within a shorter time, segregation of the doped elements in the silicon material is avoided, and the uniformity of the electrical resistivity of the silicon ingot is ensured; compared with the prior art, the molten-state silicon material does not need to be controlled to acquire the silicon ingot, the operation process is more simple, the production cost is low, the silicon ingot acquired through production has uniform electrical resistivity, and a solar cell prepared by the silicon ingot has better working performance.

Description

technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a method for casting silicon ingots. Background technique [0002] In the photovoltaic industry, the so-called master alloy is an alloy of impurity elements and silicon, which is mainly to dope the silicon material to change the concentration of donor impurities or acceptor impurities in the silicon melt, so that the grown single crystal or polycrystalline The crystal resistivity meets the established requirements. [0003] At present, the commonly used method for preparing master alloy silicon ingots is mainly to use a single crystal furnace to pull silicon ingots into one crystal. Using this preparation method to produce silicon ingots requires complicated operations, great difficulty in realization, and high production costs. Contents of the invention [0004] The object of the present invention is to provide a method for silicon ingot casting, which solves the pro...

Claims

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Application Information

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IPC IPC(8): C30B11/02C30B29/06
CPCC30B11/02C30B29/06
Inventor 彭瑶邱建峰王义斌周慧敏徐志群
Owner JINKO SOLAR CO LTD
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