Explosion-proof single-crystal furnace for production of heavily-doped phosphorus silicon single crystal and phosphorus removal method

Abstract

Disclosed is an explosion-proof single-crystal furnace for production of heavily-doped phosphorus silicon single crystal. A main vacuum pump of the single-crystal furnace is communicated with the bottom of a furnace tube through an extraction pipeline to be controlled to extract air in the furnace tube through the extraction pipeline; an air inlet pipeline connected to one end of the extraction pipeline and close to the furnace tube is connected with an air switch to have the air switch controlled to feed air into the extraction pipeline, and phosphorus-containing volatile substances deposited in the extraction pipeline are allowed to be removed by oxidation. The air inlet pipeline is added to the foremost end of the extraction pipeline of the single-crystal furnace, the air can be fed to the extraction pipeline through the air inlet pipeline after the air switch on the air inlet pipeline is turned on, parts of pipeline walls, filters and the like deposited with the volatile substances are oxidized, the situation that heat produced from reaction is accumulated to reach the explosive limit is avoided, burning speed of phosphorus is well controlled, and the problem about pipeline explosion is solved.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor silicon single crystals, in particular to an explosion-proof single crystal furnace and a phosphorus removal method for the production of heavy phosphorus-doped silicon single crystals. Background technique [0002] In the semiconductor industry, the single crystal furnace is an important equipment for the growth of silicon single crystal. The quartz crucible in the single crystal furnace is used to hold the polycrystal. A certain amount of dopant is added to the polycrystal. , turning shoulders, equal-diameter growth, finishing and other processes can produce products that meet customer requirements. With the development of integrated circuit technology and applications, especially the lower and lower power consumption requirements of power devices, lower resistivity requirements are put forward for single crystal silicon substrates. The solid solubility of dopant in silicon determines...

AI Technical Summary

Problems solved by technology

[0003] In order to solve the danger caused by the easy combustion or even explosion of phosphorus-containing volatiles deposited during the production of heavily phosphorus-doped single crystals in the existing single crystal furnace, the present invention improves and designs a single crystal furnace based on the existing single crystal furnace. Explosion-proof single crystal furnace and phosphorus removal method for the production of heavy phosphorus-doped silicon single crystal. The single crystal furnace can convert red phosphorus and white phosphorus in volatiles into stable phosphorus pentoxide, thereby eliminating the risk of explosion

Images