High temperature-resistant wave absorbing wedge and preparation method thereof
A technology of high temperature resistance and high temperature sintering, which is applied in the direction of chemical instruments and methods, and other chemical processes, can solve the problems of poor microwave absorption performance, poor temperature resistance, and internal energy can only reach -7~-12dB, and achieve easy preparation, Good high temperature resistance and oxidation resistance, the effect of excellent broadband absorbing performance
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Embodiment 1
[0038] a kind of like figure 1 , figure 2 The high-temperature-resistant wave-absorbing material wedge is shown, and the wave-absorbing wedge is a regular square pyramid with a hollow structure. The wave-absorbing wedge includes a substrate layer and a high-temperature-resistant resistance coating uniformly coated and sintered on the surface of the substrate layer. The substrate layer adopts Hollow aluminum oxide regular pyramid, resistive coating thought Bi 2 o 3 -Al 2 o 3 -SiO 2 glass as the binder phase, with RuO 2 is the conductive phase. The base length of the regular quadrangular pyramid is a=20mm, the thickness of the side plate is t=1.5mm, the vertical height of the side plate is h=150mm, and the average square resistance of the resistive coating is about 190Ω / □.
[0039] The preparation method of the high-temperature-resistant wave-absorbing material wedge of this embodiment includes the following steps:
[0040] (1) Preparation of hollow alumina regular pyra...
Embodiment 2
[0054] a kind of like figure 1 , image 3 The high-temperature-resistant wave-absorbing material wedge is shown, and the wave-absorbing wedge is a regular square pyramid with a hollow structure. The wave-absorbing wedge includes a substrate layer and a high-temperature-resistant resistance coating uniformly coated and sintered on the surface of the substrate layer. The substrate layer adopts Hollow mullite fiber reinforced mullite regular pyramid, resistive coating thought Bi 2 o 3 -Al 2 o 3 -SiO 2 glass as the binder phase, with RuO 2 is the conductive phase. The base length of the regular quadrangular pyramid is a=30mm, the thickness of the side plate is t=2mm, the vertical height of the side plate is h=300mm, and the average square resistance of the resistive coating is about 150Ω / □.
[0055] The preparation method of the high-temperature-resistant wave-absorbing material wedge of this embodiment includes the following steps:
[0056] (1) Preparation of hollow mulli...
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