Crucible and preparation method thereof

A crucible and coating technology, which is applied to the crucible for preparing polysilicon and the preparation field thereof, can solve the problems of weakening the effect of the bottom high-efficiency layer, wide red zone on the side of the silicon wafer, and high local defect density, and achieves uniform and dense structure of the structural layer. The effect of reducing the lateral red zone and dense structure
CN107573101AActive Publication Date: 2018-01-12YANGZHOU RONGDE NEW ENERGY TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
YANGZHOU RONGDE NEW ENERGY TECH
Publication Date
2018-01-12

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Abstract

The invention provides a crucible and a preparation method thereof. The crucible comprises: a crucible body, a first coating, a second coating and a third coating, wherein the crucible body comprisesa bottom wall and a side wall; the first coating layer is arranged on the bottom wall and the side wall for preventing metal impurities from diffusing to crystalline grains in the crucible body, the second coating is arranged on the outside of the first coating layer on the side wall, the second coating layer is used to assist in nucleating the crystalline grains within the crucible body; the third coating is arranged on the outside of the first coating layer on the bottom wall, the third coating layer is used to assist in separating the crystalline grains within the crucible body from the crucible body. The crucible of the invention can effectively reduce diffusion of the metal impurities in the crucible body into polycrystalline crystals located in the crucible body, so that purity of the prepared polycrystalline silicon is high.
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Description

technical field

[0001] The invention relates to a crucible, in particular to a crucible for preparing polysilicon and a preparation method thereof. Background technique

[0002] In recent years, with the depletion of non-renewable energy sources, solar cells have been developed rapidly. Since the preparation process of cast polysilicon is relatively simple and the cost is much lower than that of monocrystalline silicon, polysilicon gradually replaces the dominant position of Czochralski monocrystalline silicon in the solar cell material market and becomes the most important photovoltaic material in the industry. However, compared with Czochralski monocrystalline silicon, various defects in cast polycrystalline silicon, such as grain boundaries, dislocations, micro-defects, and impurity carbon and oxygen in the material, make the conversion efficiency of polycrystalline silicon solar cells lower than that of Czochralski monocrystalline silicon. Crystalline silicon solar cell...

Claims

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