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A kind of preparation method of carbon quantum dot fluorescent material

A technology of carbon quantum dots and fluorescent materials, applied in the field of fluorescent material preparation, can solve the problems of increasing complexity and difficulty in obtaining long-term guarantee of fluorescent properties.

Active Publication Date: 2020-04-24
CHINA THREE GORGES UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These methods not only need to prepare high-efficiency fluorescent carbon quantum dots in advance, but also consider the combination of quantum dots and matrix materials, which will inevitably increase the complexity of material synthesis, and it is difficult to obtain long-term guarantees for the excellent fluorescent properties of materials.

Method used

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  • A kind of preparation method of carbon quantum dot fluorescent material

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Effect test

Embodiment 1

[0017] (1) Clean and dry the substrate. First place the glass sheet in acetone for 5-10 minutes of ultrasonic cleaning, then use deionized water to ultrasonically wash the glass sheet for 4-6 minutes, then place it in absolute ethanol for 5-10 minutes, and then use deionized water Ultrasonic rinse the glass slide again for 4-6 minutes, and finally dry it with nitrogen;

[0018] (2) The reaction chamber is pre-evacuated. Use mechanical pumps, Roots pumps, molecular pumps and other vacuum equipment to pre-evacuate the reaction chamber at 100 °C until the pressure is lower than 10 -4 Pa;

[0019] (3) Preparation of multilayer films embedded with carbon quantum dots. First, methane and silane were used as working gases, and SiC with carbon quantum dots embedded in the reaction chamber in step (2) was alternately prepared on the glass substrate by using plasma-enhanced chemical vapor deposition technology. X :H and CNx:H multilayer films. SiC X :H film specific preparation p...

Embodiment 2

[0023] (1) Clean and dry the substrate. First place the glass sheet in acetone for 5-10 minutes of ultrasonic cleaning, then use deionized water to ultrasonically wash the glass sheet for 4-6 minutes, then place it in absolute ethanol for 5-10 minutes, and then use deionized water Ultrasonic rinse the glass slide again for 4-6 minutes, and finally dry it with nitrogen;

[0024] (2) The reaction chamber is pre-evacuated. Use mechanical pumps, Roots pumps, molecular pumps and other vacuum equipment to pre-evacuate the reaction chamber at 100 °C until the pressure is lower than 10 -4 Pa;

[0025] (3) Preparation of multilayer films embedded with carbon quantum dots. First, methane and silane were used as working gases, and SiC with carbon quantum dots embedded in the reaction chamber in step (2) was alternately prepared on the glass substrate by using plasma-enhanced chemical vapor deposition technology. X :H and CNx:H multilayer films. SiC X :H film specific preparation p...

Embodiment 3

[0029] (1) Clean and dry the substrate. First place the glass sheet in acetone for 5-10 minutes of ultrasonic cleaning, then use deionized water to ultrasonically wash the glass sheet for 4-6 minutes, then place it in absolute ethanol for 5-10 minutes, and then use deionized water Ultrasonic rinse the glass slide again for 4-6 minutes, and finally dry it with nitrogen;

[0030] (2) The reaction chamber is pre-evacuated. Use mechanical pumps, Roots pumps, molecular pumps and other vacuum equipment to pre-evacuate the reaction chamber at 100 °C until the pressure is lower than 10 -4 Pa;

[0031] (3) Preparation of multilayer films embedded with carbon quantum dots. First, methane and silane were used as working gases, and SiC with carbon quantum dots embedded in the reaction chamber in step (2) was alternately prepared on the glass substrate by using plasma-enhanced chemical vapor deposition technology. X :H and CNx:H multilayer films. SiC X:H film specific preparation pr...

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Abstract

The invention provides a preparation method for a carbon quantum dot fluorescent material. The method comprises the following steps: through utilization of a plasma reinforced chemical vapor deposition technique, alternately depositing hydrogenated silicon carbide film (SiCX:H) and hydrogenated carbon nitride film (CNX:H) on a glass substrate by controlling deposition parameters, and then annealing in a vacuum furnace at 250-350 DEG C, thereby acquiring the fluorescent material embedded with the carbon quantum dot. Compared with the preparation method for coating or attaching the substrate, the preparation method provided by the invention has the advantages that the preparation process of efficient fluorescent carbon quantum dot is avoided, the carbon quantum dot and the multi-layer film structure are integrated with each other, hydrogen in the film is capable of effectively passivating the defects in the film and the fluorescence efficiency of the material is obviously increased. Thecarbon quantum dot fluorescent material prepared according to the invention has fluorescent performance stability and high illuminating efficiency and the preparation method is simple and environmentally friendly, so that the carbon quantum dot fluorescent material can be excellently applied to various semi-conductor illuminators.

Description

technical field [0001] The invention belongs to the technical field of fluorescent material preparation, and in particular relates to a method for preparing a carbon quantum dot fluorescent material. Background technique [0002] Traditional fluorescent materials include organic fluorescent materials and inorganic fluorescent materials, and inorganic fluorescent materials are mainly rare earth fluorescent materials. Since the beginning of the new century, with the continuous improvement of the performance requirements of fluorescent materials and the gradual scarcity of rare earth resources, new fluorescent materials mainly based on nano fluorescent materials have gradually emerged. As a nanoscale carbon quantum dot fluorescent material, it has incomparable advantages such as long life, continuously adjustable emission wavelength, wide color gamut, high color rendering index, low toxicity, good biocompatibility, and high fluorescence efficiency. In the field of fluorescence...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09K11/65C01B32/15B82Y20/00B82Y40/00
Inventor 姜礼华李明明孙宜华谭新玉肖婷向鹏
Owner CHINA THREE GORGES UNIV
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