Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material

A composite material and surface covering technology, which is applied in the direction of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problems of power semiconductor device failure, deformation, movement, etc., and achieve the effect of compact structure, convenient operation, and firm connection

Active Publication Date: 2018-01-19
上海开朋科技有限公司
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the difference in thermal expansion performance, the power semiconductor device will cause permanent movement or deformation of each component material during the process of power loss

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material
  • Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material
  • Process for covering surface of aluminum diamond composite material with copper foil and embedding ceramic material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] The specific implementation manner of the present invention will be described below in conjunction with the accompanying drawings.

[0037] like Figure 1-Figure 9 As shown, the process of covering the surface of the aluminum-diamond composite material of this embodiment with copper foil while inlaying ceramic materials includes the following steps:

[0038] Step 1: Fix the copper foil 6 to be processed with a thickness of 0.1-0.5mm on the machine tool table 7;

[0039] Step 2: above the copper foil 6, two sets of knife rows are installed, which are respectively the first knife row seat 1, and a plurality of first carving knives 2 are installed in parallel and spaced intervals on the first knife row seat 1, and are also provided with The first knife row seat 1 is parallel to the second knife row seat 3, and a plurality of second carving knives 4 are installed in parallel and spaced intervals on the second knife row seat 3;

[0040] Step 3: The machine table 7 carries ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Depthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a process for covering a surface of an aluminum diamond composite material with a copper foil and embedding a ceramic material. The copper foil covering the surface of aluminum diamond and the ceramic material are etched in advance during the die casting process, the copper foil and the ceramic material wrap an outer side of diamond powder so that firm connection with thediamond composite material is formed very well during the high-pressure die casting and aluminum permeating process, the working reliability of a multi-chip assembly and a large-current power module is improved, and demands such as welding, mechanical processing and coating of a surface of a cooling substrate material are satisfied. The copper foil and the ceramic material which are etched wrap the outer side of the diamond powder, and firm connection among the copper foil, the ceramic material and the aluminum diamond composite material substrate during the die casting process is achieved.

Description

technical field [0001] The invention relates to the technical field of power semiconductor device manufacturing technology, in particular to a process in which the surface of an aluminum-diamond composite material is covered with copper foil and ceramic materials are embedded at the same time. Heat dissipation device for high-power semiconductor modules made of ceramic materials such as aluminum. Background technique [0002] High-power semiconductor devices are the core components of aerospace, national defense construction, civil transportation, power transmission and transformation systems, etc. With the development of power semiconductor devices and the continuous improvement of various technologies, the application voltage range and frequency range continue to expand. Power semiconductor devices will generate certain losses during the working process. When the losses generated by each power semiconductor device chip during the working process are concentrated in a very...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L21/48
Inventor 傅蔡安傅菂
Owner 上海开朋科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap