A kind of inorganic perovskite solar cell and preparation method thereof
A solar cell and perovskite technology, applied in the manufacture of circuits, electrical components, final products, etc., can solve problems such as large band gap, easy decomposition, instability, etc., to increase open circuit voltage, suppress charge recombination, and optimize crystallization Effect
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Embodiment 1
[0031] Preparation of perovskite precursor solution: first, PbI2 , PbBr 2 and CsI were dissolved in DMF and DMSO at a molar ratio of 1:1:2. As preferably, the present embodiment weighs 0.208 gram of CsI, 0.1844 gram of PbI respectively 2 with 0.1469 g PbBr 2 Dissolve together in a mixed solution of 1 ml of DMF and DMSO (volume ratio DMF:DMSO=7:3), stir to dissolve.
[0032] Preparation of perovskite solution: Add 27 mg of lead acetate to the perovskite precursor solution, and stir evenly to form a perovskite solution of 5%wt lead acetate.
[0033] Preparation of dense titanium dioxide film: use sol-gel method to coat a layer of dense titanium dioxide film on the conductive glass layer; The titanium dioxide film is treated with titanium tetrachloride and sintered for later use. The thickness of the dense titanium dioxide film is 100-150 nanometers, preferably, the thickness of the dense titanium dioxide film in this embodiment is 100 nanometers. The annealing temperature o...
Embodiment 2
[0041] Preparation of perovskite precursor solution: first, PbI 2 , PbBr 2 and CsI were dissolved in DMF and DMSO at a molar ratio of 1:1:2. As preferably, the present embodiment weighs 0.208 gram of CsI, 0.1844 gram of PbI respectively 2 with 0.1469 g PbBr 2 Dissolve together in a mixed solution of 1 ml of DMF and DMSO (volume ratio DMF:DMSO=7:3), stir to dissolve.
[0042] Preparation of perovskite solution: add 54 mg of lead acetate to the perovskite precursor solution, and stir evenly to form a perovskite solution of 10%wt lead acetate.
[0043] Preparation of dense titanium dioxide film: use sol-gel method to coat a layer of dense titanium dioxide film on the conductive glass layer; The titanium dioxide film is treated with titanium tetrachloride and sintered for later use. The thickness of the dense titanium dioxide film is 100-150 nanometers, preferably, the thickness of the dense titanium dioxide film in this embodiment is 100 nanometers. The annealing temperatur...
Embodiment 3
[0051] Preparation of perovskite precursor solution: first, PbI 2 , PbBr 2 and CsI were dissolved in DMF and DMSO at a molar ratio of 1:1:2. As preferably, the present embodiment weighs 0.208 gram of CsI, 0.1844 gram of PbI respectively 2 with 0.1469 g PbBr 2 Dissolve together in a mixed solution of 1 ml of DMF and DMSO (volume ratio DMF:DMSO=7:3), stir to dissolve.
[0052] Preparation of perovskite solution: Add 81 mg of lead acetate to the perovskite precursor solution, and stir evenly to form a perovskite solution of 15%wt lead acetate.
[0053] Preparation of dense titanium dioxide film: use sol-gel method to coat a layer of dense titanium dioxide film on the conductive glass layer; The titanium dioxide film is treated with titanium tetrachloride and sintered for later use. The thickness of the dense titanium dioxide film is 100-150 nanometers, preferably, the thickness of the dense titanium dioxide film in this embodiment is 100 nanometers. The annealing temperatur...
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Abstract
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